DTA114TG-T92-B [UTC]
DIGITAL TRANSISTORS;
| 型号： | DTA114TG-T92-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | DIGITAL TRANSISTORS |
| 文件： | 总3页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
DTA114T
PNP SILICON TRANSISTOR
DIGITAL TRANSISTORS
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow positive input.
EQUIVALENT CIRCUIT
C
R1
B
E
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
E
E
E
E
2
B
B
B
C
C
C
3
C
C
C
B
B
B
-
DTA114TG-AE3-R
DTA114TG-AL3-R
DTA114TG-AN3-R
DTA114TG-T92-B
DTA114TG-T92-K
DTA114TG-T9S-K
SOT-23
SOT-323
SOT-523
TO-92
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
-
-
DTA114TL-T92-B
DTA114TL-T92-K
DTA114TL-T9S-K
TO-92
TO-92SP
Bulk
Note: Pin assignment: E: Emitter
B: Base
C: Collector
MARKING
SOT-23 / SOT-323 / SOT-523
TO-92 / TO-92SP
AB4T
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1of 3
QW-R206-061.D
DTA114T
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-100
200
mA
SOT-23
SOT-323/SOT-523
TO-92
150
Collector Power Dissipation
PC
mW
625
TO-92SP
550
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVCBO
BVCEO
BVEBO
IC=-50μA
-50
-50
-5
V
V
IC=-1mA
IE=-50μA
V
VCE(SAT) IC=-10mA, IB=-1mA
-0.3
-0.5
-0.5
V
ICBO
IEBO
VCB=-50V
VEB=-4V
μA
μA
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
hFE
VCE=-5V, IC=-1mA
100 250 600
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
fT
7
10
13
kΩ
Transition Frequency
VCE=-10V, IE=5mA,f=100MHz (Note)
250
MHz
Note: Transition frequency of the device
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-061.D
DTA114T
PNP SILICON TRANSISTOR
■ TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
www.unisonic.com.tw
QW-R206-061.D
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