DTA114TH [ETC]
Transistors ; 晶体管\n
ETC 
DTA114TM / DTA114TE / DTA114TUA
DTA114TKA / DTA114TSA
Transistors
Digital transistors (built-in resistor)
DTA114TM / DTA114TE / DTA114TUA
DTA114TKA / DTA114TSA
!Equivalent circuit
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
C
E
B
R1
3) Only the on/off conditions need to be set for
operation, making device design easy.
B : Base
C : Collector
E : Emitter
!Structure
PNP digital transistor
(With single built in resistor)
!External dimensions (Units : mm)
1.6 0.2
DTA114TM
DTA114TE
1.2
1.0 0.1
0.50.5
0.2 0.8 0.2
0.7 0.1
+0.1
+0.1
0.2
−0.05
0.2
( )
2
0.55 0.1
−0.05
(3)
( )
1
(1) (2)
0~0.1
0.15Max.
(3)
(1) Base
(1) Emitter
(2) Base
(3) Collector
+0.1
0.3
−0.05
(2) Emitter
(3) Collector
ROHM
:
VMT3
ROHM : EMT3
0.15 0.05
Abbreviated symbol : 94
Abbreviated symbol : 94
2.0 0.2
2.9 0.2
DTA114TUA
DTA114TKA
+0.2
1.1
0.9 0.1
0.7 0.1
1.3 0.1
−0.1
1.9 0.2
0.8 0.1
0.65 0.65
0.2
0.95 0.95
(1)
(2)
(2)
(1)
0~0.1
0~0.1
(3)
(3)
+0.1
−0
0.3
0.15 0.05
+0.1
(1) Emitter
(2) Base
(3) Collector
0.15
(1) Emitter
(2) Base
(3) Collector
+0.1
−0.06
All terminals have same dimensions
0.4
−0.05
ROHM
EIAJ
:
UMT3
ROHM
EIAJ
:
SMT3
All terminals have same dimensions
Abbreviated symbol : 94
:
SC-70
:
SC-59
Abbreviated symbol : 94
4
0.2
2 0.2
DTA114TSA
+
0.15
0.45
−
0.05
+
−
0.15
+
0.4
0.45
2.5
0.5
0.05
−
0.1
5
(1) Emitter
(2) Collector
(3) Base
ROHM
EIAJ
:
SPT
(1) (2) (3)
:
SC-72
DTA114TM / DTA114TE / DTA114TUA
DTA114TKA / DTA114TSA
Transistors
!Absolute maximum ratings (Ta=25°C)
Limits(DTA114T
)
Parameter
Symbol
Unit
M
E
UA
−50
−50
−5
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
V
V
V
I
C
−100
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
P
C
150
200
300
Tj
Tstg
150
−55~+150
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
−50
−50
−5
−
Typ.
−
Max.
−
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
V
V
I
I
I
C
=−50µA
=−1mA
BVCEO
BVEBO
−
−
C
−
−
V
E
=−50µA
CB=−50V
EB=−4V
I
CBO
EBO
CE(sat)
FE
−
−0.5
−0.5
−0.3
600
13
µA
µA
V
V
V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
DC current transfer ratio
V
−
−
I
C/I
B
=−10mA/−1mA
=−1mA
h
100
7
250
10
250
−
V
CE=−5V, I
C
Input resistance
R1
kΩ
MHz
−
Transition frequency
f
T
−
−
V
CE=−10V, I
E
=5mA, f=100MHz
∗
∗ Transition frequency of the device
!Packaging specifications
VMT3
EMT3
UMT3
SMT3
SPT
Taping
TP
Package
Package type
Code
Taping
T2L
Taping
TL
Taping
T106
Taping
T146
Basic ordering
unit (pieces)
8000
3000
3000
3000
5000
Type
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
DTA114TSA
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
DTA114TM / DTA114TE / DTA114TUA
DTA114TKA / DTA114TSA
Transistors
!Electrical characteristic curves
1k
−1
V
CE=−5V
lC/lB=20
500
−500m
200
100
−200m
−100m
−50m
Ta=100°C
25°C
−40°C
Ta=100°C
25°C
−40°C
50
20
10
5
−20m
−10m
−5m
2
1
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I (A)
C
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
相关型号：
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