D965ASSS [UTC]
Transistor;
| 型号： | D965ASSS |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTCD965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
2
1
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
3
MARKING(D965SS) MARKING(D965ASS)
SOT-23
D65
D65A
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
D965SS
D965ASS
SYMBOL
RATING
40
UNIT
V
VCBO
VCEO
20
30
V
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
VEBO
Pc
Ic
7
750
5
V
mW
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
D965SS
SYMBOL
BVCBO
TEST CONDITIONS
Ic=100µA,IE=0
MIN TYP MAX UNIT
40
V
Ic=1mA,IB=0
BVCEO
20
30
7
V
D965ASS
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
BVEBO
ICBO
IEBO
IE=10µA,Ic=0
VCB=10V,IE=0
VEB=7V,Ic=0
V
nA
nA
100
100
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R206-016,B
UTCD965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
DC current gain(note)
VCE=2V,Ic=1mA
VCE=2V,Ic=0.5A
VCE=2V,Ic=2A
200
hFE
230
150
800
PARAMETER
SYMBOL
VCE(sat)
fT
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Ic=3A, IB= 0.1A
VCE=6V,Ic=50mA
VCB=20V,IE=0
f=1MHz
1
V
150
MHz
pF
Cob
50
CLASSIFICATION OF hFE2
RANK
Q
R
S
RANGE
230-380
340-600
560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
3.0
2.5
3
4
10
I
I
I
B
=3.0mA
=2.5mA
=2.0mA
10
B
B
V
CE=2V
3
10
2
10
2.0
1.5
VCE=2V
I
I
B
=1.5mA
=1.0mA
B
1
2
10
10
I
B
=0.5mA
1.0
0
0
1
10
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
1
2
3
10
4
10
0
0.2
0.4
0.6
0.8
1.0
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
3
10
10
10
Ic=10*I
B
V
CE=6V
f=1MHz
3
2
2
10
VBE(sat)
I
E=0
10
10
VCE(sat)
2
1
1
10
10
10
1
0
0
10
10
10
4
0
1
2
3
10
-1
0
1
2
10
0
1
2
3
10
10
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R206-016,B
UTCD965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R206-016,B
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