D965SSL-R-AE3-R [UTC]
Small Signal Bipolar Transistor,;
| 型号： | D965SSL-R-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT NPN TRANSISTOR
FEATURES
* Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
2
E
E
3
C
C
D965SSL-x-AE3-R
D965ASSL-x-AE3-R
D965SSG-x-AE3-R
D965ASSG-x-AE3-R
SOT-23
SOT-23
Tape Reel
Tape Reel
Note: Pin assignment: B: Base
E: Emitter
C: Collector
MARKING
D965SS
D965ASS
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., LTD
1 of 4
QW-R206-016.D
D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector-Base voltage
SYMBOL
VCBO
RATINGS
40
UNIT
V
D965SS
20
Collector-Emitter Voltage
VCEO
V
D965ASS
30
Emitter-Base Voltage
Collector dissipation(Ta=25C)
Collector current
VEBO
Pc
7
750
V
mW
A
IC
5
Junction Temperature
Storage Temperature
TJ
+150
-65 ~ +150
C
C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
SYMBOL
BVCBO
TEST CONDITIONS
IC=100μA, IE=0
MIN TYP MAX UNIT
40
V
Collector-emitter breakdown
voltage
D965SS
D965ASS
20
30
7
V
V
V
BVCEO
IC=1mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
BVEBO
ICBO
IC =0, IE=10μA
VCB=10V, IE=0
VEB=7V, IC=0
100 nA
100 nA
Emitter cut-off current
IEBO
hFE1
hFE2
hFE3
VCE=2V, IC=1mA
VCE=2V, IC=0.5A
VCE=2V, IC=2A
200
150
S
DC current gain
230
150
800
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
VCE(SAT) Ic=3A, IB= 0.1A
1
V
fT
VCE=6V,IC=50mA
MHz
pF
Cob
VCB=20V,IE=0, f=1MHz
50
CLASSIFICATION OF hFE2
Q
R
RANK
230~380
340~600
560~800
RANGE
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-016.D
www.unisonic.com.tw
D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-016.D
www.unisonic.com.tw
D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-016.D
www.unisonic.com.tw
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