BF422L-T92-B [UTC]
HIGH VOLTAGE TRANSISTOR;型号: | BF422L-T92-B |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE TRANSISTOR 高压 |
文件: | 总4页 (文件大小:316K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BF422
NPNEPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
* Collector-Emitter Voltage: VCEO=250V.
* Complementary to UTC BF423.
1
TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
BF422G-T92-B
BF422G-T92-K
1
E
E
2
C
C
3
B
B
BF422L-T92-B
TO-92
TO-92
Tape Box
Bulk
BF422L-T92-K
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., LTD
1 of 4
QW-R201-063.C
BF422
NPNEPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
250
250
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-base voltage
Collector current (DC)
collector current (Peak)
base current
V
V
50
mA
mA
mA
mW
ICP
100
50
IB
Collector Power dissipation
Junction Temperature
Storage Temperature
PC
625
TJ
150
°C
°C
TSTG
-40 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range
and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB= 200V, IE=0
MIN TYP MAX UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
DC current gain
10
50
nA
nA
IEBO
VEB= 5V, IC=0
hFE
VCE=20V, IC=25mA
50
60
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC= 30mA, IB= 5mA
0.6
1.6
V
V
VBE
fT
VCE=-20V, IC=25mA
VCE= 10V , IC= 10mA
VCB= 30V, IE=0, f=1MHz
0.75
Transition frequency
MHz
pF
Reverse Transfer Capacitance
Cre
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-063.C
www.unisonic.com.tw
BF422
NPNEPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R201-063.C
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BF422
NPNEPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. The information presented in
this document does not form part of any quotation or contract, is believed to be accurate and reliable
and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-063.C
www.unisonic.com.tw
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