BF422RLRA [ONSEMI]
500mA, 250V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN;
| 型号： | BF422RLRA |
| 厂家： | 
ONSEMI |
| 描述： | 500mA, 250V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 放大器 晶体管 |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF422
High Voltage Transistors
NPN Silicon
Features
• This is a Pb−Free Device*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Value
250
250
5.0
Unit
Vdc
3
BASE
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
Vdc
1
EMITTER
V
EBO
Vdc
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation (Note 1)
I
50
mAdc
mA
C
I
100
CM
P
D
@ T = 25°C
Derate above 25°C
830
6.6
mW
mW/°C
A
TO−92
(TO−226AA)
CASE 29−11
STYLE 14
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
1
2
3
THERMAL CHARACTERISTICS
Characteristic
STRAIGHT LEAD
BULK PACK
Symbol
Max
150
68
Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
°C/W
Thermal Resistance,
Junction−to−Lead
R
q
JL
°C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BF422
AYWW G
G
2
1. Mounted on a FR4 board with 200 mm of 1 oz copper and lead length of
5 mm.
BF422 = Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
BF422G
Package
Shipping
TO−92
5000 Units/Box
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
September, 2010 − Rev. 1
BF422/D
BF422
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
300
300
5.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
−
Vdc
E
C
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
0.01
100
mAdc
nAdc
CBO
CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
−
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
(I = 25 mAdc, V = 20 Vdc)
C
h
50
−
−
−
FE
CE
Collector−Emitter Saturation Voltage
(I = 20 mAdc, I = 2.0 mAdc)
V
0.5
2.0
Vdc
Vdc
CE(sat)
C
B
Base−Emitter Saturation Voltage
(I = 20 mAdc, I = 2.0 mAdc)
V
−
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
f
60
−
MHz
pF
T
(I = 10 mAdc, V = 10 Vdc, f = 20 MHz)
C
CE
Common Emitter Feedback Capacitance
(V = 30 Vdc, I = 0, f = 1.0 MHz)
C
−
1.6
re
CB
E
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
2
BF422
120
100
V
CE
= 10 Vdc
T = +125°C
J
80
60
40
25°C
-55°C
20
0
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
10
80
70
60
50
40
C
eb
@ 1MHz
1.0
0.1
C
cb
@ 1MHz
30
20
10
T = 25°C
J
V
= 20 V
f = 20 MHz
CE
0.1
1.0
10
100
1000
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
CE(sat)
C B
@ 125°C, I /I = 10
CE(sat)
CE(sat)
BE(sat)
BE(sat)
BE(sat)
BE(on)
C B
V
V
V
V
V
@ -55°C, I /I = 10
C B
@ 25°C, I /I = 10
C B
@ 125°C, I /I = 10
C B
@ -55°C, I /I = 10
C B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
BE(on)
CE
@ -55°C, V = 10 V
CE
BE(on)
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 4. ”ON” Voltages
http://onsemi.com
3
BF422
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
N
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
MILLIMETERS
SEATING
PLANE
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
K
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BF422/D
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