BD237G-T6S-K [UTC]
Power Bipolar Transistor,;
| 型号： | BD237G-T6S-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 局域网 放大器 晶体管 |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD237
NPN EPITAXIAL SILICON TRANSISTOR
80V, NPN TRANSISTORS
DESCRIPTION
The UTC BD237 is an NPN transistor. it uses UTC’s advanced
technology to provide customers with high collector-emitter
breakdown voltage, etc.
FEATURES
* Complement to UTC BD238 respectively
* High collector-emitter breakdown voltage
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-126S
Packing
Bulk
Lead Free
Halogen Free
BD237G-T6S-K
1
2
3
BD237L-T6S-K
E
C
B
www.unisonic.com.tw
1 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R226-001, B
UNISONIC TECHNOLOGIES CO., LTD
BD237
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
100
80
V
5
V
Continuous Collector Current
Collector Dissipation
2
A
PC
1.25
150
-65~150
W
°C
°C
Junction Temperature
TJ
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=1mA, IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
100
80
5
V
IC=100mA, IB=0
V
V
IE=1mA, IC=0
VCB=100V, IE=0
100 µA
Emitter Cut-Off Current
IEBO
VEB=5V, IC=0
1
mA
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=100mA
IC=150mA,VCE=2V
IC=1A,VCE=2V
0.6
h
FE (1)
40
25
3
DC Current Gain
hFE (2)
fT
Transition Frequency
IC=250mA, VCE=10V, f=10MHz
MHz
www.unisonic.com.tw
2 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R226-001, B
BD237
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R226-001, B
www.unisonic.com.tw
相关型号：
BD237LEADFREE
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CENTRAL
©2020 ICPDF网 联系我们和版权申明