BD238 [UTC]
-80V, PNP TRANSISTOR;
| 型号： | BD238 |
| 厂家： | 
Unisonic Technologies |
| 描述： | -80V, PNP TRANSISTOR 局域网 晶体管 |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
BD238
PNP EPITAXIAL SILICON TRANSISTOR
-80V, PNP TRANSISTOR
DESCRIPTION
The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s
advanced technology to provide the customers with high DC current
gain and high collector-emitter breakdown voltage, etc.
FEATURES
* High DC current gain
* High collector-emitter breakdown voltage
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-126S
Packing
Bulk
Lead Free
Halogen Free
BD238G-T6S-K
1
2
3
BD238L-T6S-K
E
C
B
www.unisonic.com.tw
1 of 3
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R226-002, B
UNISONIC TECHNOLOGIES CO., LTD
BD238
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-100
-80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-5
V
-2
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
1.25
150
W
°C
°C
TJ
TSTG
-55~150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
V(BR)CBO IC=-1mA, IE=0
MIN
-100
-80
-5
TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V
V(BR)CEO
V(BR)EBO
ICBO
V
V
IC=-100mA, IB=0
IC=-1mA, IE=0
-100 µA
VCB=-100V, IE=0
VEB=-5V, IC=0
IEBO
-1
mA
Emitter Cut-Off Current
hFE(1)
40
25
VCE=-2V, IC=-150mA
VCE=-2V, IC=-1A
IC=-1A, IB=-100mA
DC Current Gain
hFE(2)
VCE(sat)
-0.6
V
Collector-Emitter Saturation Voltage
Transition Frequency
VCE=-10V, IC=-250mA,
fT
3
MHz
f=10MHz
www.unisonic.com.tw
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R226-002, B
BD238
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector-Emitter Voltage
1.2
1
IB=-9.12mA
0.8
0.6
0.4
0.2
IB=-0.95mA
0
2.5
Collector-Emitter Voltage, -VCE (V)
0
0.5
1
1.5
2
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R226-002, B
www.unisonic.com.tw
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