BD140-16 [UTC]
暂无描述;
Unisonic Technologies 
UTC BD136/138/140
PNPEPITAXIALSILICONTRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC BD136/BD138/BD140 are silicon epitaxial
planer PNP transistor ,designed for use as audio amplifiers
and drivers utilizing complementary or quasi complementary
circuits.
The complementary NPN types are the BD135/BD137/
BD139.
1
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
BD136
BD138
BD140
-45
-60
-80
VCBO
V
Collector-Emitter Voltage
BD136
BD138
BD140
-45
-60
-80
VCEO
V
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
VEBO
Ic
IcM
IB
-5
-1.5
-3
-0.5
12.5
1.25
-65 ~ 150
150
V
V
A
A
Total Dissipation
(Tc≦25°C)
(Ta≦25°C)
W
W
°C
°C
Ptot
Storage Temperature
Operating Junction Temperature
Tstg
Tj
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX
UNIT
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
θjc
10
100
°C/W
°C/W
θjA
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-013,B
UTC BD136/138/140
PNPEPITAXIALSILICONTRANSISTOR
ELECTRICAL CHARACTERISTICS(Tc=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage VCEO(sus)* IC =-30 mA, IB=0
BD136
BD138
BD140
-45
-60
V
-80
Collector Cut-off Current
ICBO
VCB =-30 V, IE=0
VCB =-30 V, IE=0, Tc = 125°C
-0.1
-10
µA
Emitter Cut- off Current
DC Current Gain
IEBO
hFE1
hFE2
hFE3
VEB = -5 V, IC=0
-10
µA
VCE=-2V, IC =-5 mA,
VCE=-2V, IC =-0.5A ,
VCE=-2V, IC =-150 mA,
25
25
40
250
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
* Pulsed: Pulse duration ≦ 300 µs, duty cycle 1.5 %
VCE(sat)* IC =-0.5 A, IB = -0.05 A
V
V
VBE IC =-0.5 A, VCE =-2 V
*
CLASSIFICATION OF hFE3
RANK
-6
40~100
-10
63~160
-16
100~250
RANGE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R204-013,B
相关型号：
BD140-16-BP
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
BD140-16LEADFREE
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD140-6-BP
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
BD140-BP
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
BD14000EFV-C
BD14000EFV-C是内置支持4～6节电池的分流方式的蓄电元件平衡功能的自我完结型电池平衡用LSI。内置电池平衡所需的全部功能，只需本LSI即可实现蓄电元件的电池平衡。可用于双电层电容器（EDLC）（电池电压检测范围：2.4V～3.1V）。可用于需要具有相同特性（耐压等）的电池平衡的蓄电元件。内置多种过电压检测功能，还可实现电池老化等异常模式的检测。此外，还可进行使能控制，可根据应用进行动作设定。还备有包装数量为250个的小批量卷轴产品。→BD14000EFV-CH2a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM
BD14000EFV-C(H2)
BD14000EFV-C是内置支持4～6节电池的分流方式的蓄电元件平衡功能的自我完结型电池平衡用LSI。内置电池平衡所需的全部功能，只需本LSI即可实现蓄电元件的电池平衡。可用于双电层电容器（EDLC）（电池电压检测范围：2.4V～3.1V）。可用于需要具有相同特性（耐压等）的电池平衡的蓄电元件。内置多种过电压检测功能，还可实现电池老化等异常模式的检测。此外，还可进行使能控制，可根据应用进行动作设定。BD14000EFV-CH2是包装数量为250个的小批量卷轴产品。还备有常规的2,000个装卷轴产品→BD14000EFV-CE2a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM
BD14010S
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明