BD140-16LEADFREE [CENTRAL]
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN;![BD140-16LEADFREE](http://pdffile.icpdf.com/pdf2/p00238/img/icpdf/BD140-16LEAD_1439841_icpdf.jpg)
型号: | BD140-16LEADFREE |
厂家: | ![]() |
描述: | Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN 局域网 开关 晶体管 |
文件: | 总2页 (文件大小:340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BD136
BD138
BD140
www.centralsemi.com
DESCRIPTION:
SILICON
The CENTRAL SEMICONDUCTOR BD136, BD138,
and BD140 are silicon PNP epitaxial planar transistors
designed for audio amplifier and switching applications.
PNP TRANSISTORS
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL BD136
BD138
BD140
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
V
V
V
45
45
60
60
5.0
1.5
2.0
0.5
1.0
8.0
100
80
V
V
V
A
A
A
A
W
W
CBO
CEO
EBO
I
C
I
CM
I
B
I
BM
Power Dissipation (T <70°C)
P
P
mb
D
D
Power Dissipation (T =25°C)
A
1.25
-65 to +150
10
Operating and Storage Junction Temperature
Thermal Resistance
T , T
°C
°C/W
°C/W
J
stg
Jmb
JA
Θ
Thermal Resistance
Θ
100
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
V
V
V
=30V
=30V (T =125°C)
=5.0V
100
10
100
nA
CBO
CBO
EBO
CEO
CEO
CEO
CE(SAT)
BE(ON)
FE
CB
CB
EB
μA
nA
V
V
V
C
BV
BV
BV
V
V
h
h
h
I =30mA (BD136)
45
60
80
C
I =30mA (BD138)
C
I =30mA (BD140)
C
I =500mA, I =50mA
0.5
1.0
V
V
C
B
C
C
C
C
C
V
=2.0V, I =500mA
=2.0V, I =5.0mA
=2.0V, I =150mA
=2.0V, I =500mA
CE
CE
CE
CE
CE
V
V
V
V
40
63
25
250
FE
FE
f
=5.0V, I =50mA, f=100MHz
160
MHz
T
BD136-10
BD138-10
BD140-10
BD136-16
BD138-16
BD140-16
SYMBOL
TEST CONDITIONS
=2.0V, I =150mA
MIN
63
MAX
160
MIN
100
MAX
250
h
V
FE
CE
C
R3 (13-March 2014)
BD136
BD138
BD140
SILICON
PNP TRANSISTORS
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
Mounting pad is common to lead 2
MARKING: FULL PART NUMBER
R3 (13-March 2014)
www.centralsemi.com
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00284/img/page/BD136-16-BP_1690202_files/BD136-16-BP_1690202_1.jpg)
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BD140-6-BP
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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![](http://pdffile.icpdf.com/pdf2/p00221/img/page/BD140-BP_1284209_files/BD140-BP_1284209_2.jpg)
BD140-BP
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/BD14000EFV-C_2196167_files/BD14000EFV-C_2196167_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/BD14000EFV-C_2196167_files/BD14000EFV-C_2196167_2.jpg)
BD14000EFV-C
BD14000EFV-C是内置支持4~6节电池的分流方式的蓄电元件平衡功能的自我完结型电池平衡用LSI。内置电池平衡所需的全部功能,只需本LSI即可实现蓄电元件的电池平衡。可用于双电层电容器(EDLC)(电池电压检测范围:2.4V~3.1V)。可用于需要具有相同特性(耐压等)的电池平衡的蓄电元件。内置多种过电压检测功能,还可实现电池老化等异常模式的检测。此外,还可进行使能控制,可根据应用进行动作设定。还备有包装数量为250个的小批量卷轴产品。→BD14000EFV-CH2a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/BD14000EFV-C_2196167_files/BD14000EFV-C_2196167_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/BD14000EFV-C_2196167_files/BD14000EFV-C_2196167_2.jpg)
BD14000EFV-C(H2)
BD14000EFV-C是内置支持4~6节电池的分流方式的蓄电元件平衡功能的自我完结型电池平衡用LSI。内置电池平衡所需的全部功能,只需本LSI即可实现蓄电元件的电池平衡。可用于双电层电容器(EDLC)(电池电压检测范围:2.4V~3.1V)。可用于需要具有相同特性(耐压等)的电池平衡的蓄电元件。内置多种过电压检测功能,还可实现电池老化等异常模式的检测。此外,还可进行使能控制,可根据应用进行动作设定。BD14000EFV-CH2是包装数量为250个的小批量卷轴产品。还备有常规的2,000个装卷轴产品→BD14000EFV-CE2a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM
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![](http://pdffile.icpdf.com/pdf1/p00073/img/page/BD140_382591_files/BD140_382591_2.jpg)
BD14010S
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
FAIRCHILD
![](http://pdffile.icpdf.com/pdf2/p00253/img/page/BD13816STU_1534452_files/BD13816STU_1534452_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00253/img/page/BD13816STU_1534452_files/BD13816STU_1534452_2.jpg)
BD14010STU
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL
FAIRCHILD
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