BCP68 [UTC]
NPN MEDIUM POWER POWER; NPN型中功率电源
| 型号： | BCP68 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN MEDIUM POWER POWER |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC BCP68
NPN EPITAXIAL SILICON TRANSISTOR
NPN MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V)
* Complementary to UTC BCP69
APPLICATIONS
* General purpose switching and amplification under high
current conditions.
1
SOT-223
1: BASE
2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage(Open Base)
Emitter-Base Voltage(Open Collector)
Collector Current (DC)
SYMBOL
RATINGS
UNIT
V
V
V
A
VCBO
VCEO
VEBO
IC
32
20
5
1
Peak Collector Current
Peak Base Current
ICM
IBM
2
200
A
mA
Total Power Dissipation, Ta ≤ 25℃
Operating Ambient Temperature
Junction Temperature
Ptot
Ta
Tj
1.37
-65 ~ +150
150
W
℃
℃
℃
Storage Temperature
Tstg
-65 ~ +150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS RATINGS
UNIT
K/W
K/W
Thermal Resistance From Junction To Ambient
Thermal Resistance From Junction To Soldering Point
Rth j-a
Rth j-s
Note 1
91
10
Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R207-008,B
UTC BCP68
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25℃, unless otherwise specified.)
PARAMETER
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITIONS
IE = 0, VCB = 25V
IE = 0, VCB = 25V, Tj = 150℃
MIN TYP MAX UNIT
100
10
nA
µA
nA
Emitter Cut-off Current
DC Current Gain
IEBO
IC = 0, VEB =5V
100
IC = 5mA, VCE = 10V
IC = 500mA, VCE = 1V
IC = 1A, VCE = 1V
50
85
60
375
hFE
DC Current Gain (BCP68-25)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
IC = 500mA, VCE = 1V
IC = 1A, IB = 100mA
IC = 5mA, VCE = 10V
IC = 1A, VCE = 1V
160
375
500
VCEsat
VBE
mV
mV
V
620
38
1
Collector Capacitance
IE = ie = 0, VCB = 5V, f = 1MHz
pF
CC
Transition Frequency
DC current gain ratio of the
complementary pairs
fT
hFE1
hFE2
IC = 10mA, VCE = 5V, f = 100MHz
|IC| = 0.5A, |VCE| = 1V
40
MHz
1.6
DC current gain (typical values)
300
VCE = 1V
250
200
150
100
50
0
-10-1
1
10
102
103
104
IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R207-008,B
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