BCP68-10 [INFINEON]

NPN Silicon AF Transistor (For general AF application High collector current High current gain); NPN硅晶体管自动对焦(一般自动对焦的应用高集电极电流高电流增益)
BCP68-10
型号: BCP68-10
厂家: Infineon    Infineon
描述:

NPN Silicon AF Transistor (For general AF application High collector current High current gain)
NPN硅晶体管自动对焦(一般自动对焦的应用高集电极电流高电流增益)

晶体 晶体管
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中文:  中文翻译
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NPN Silicon AF Transistor  
BCP 68  
For general AF application  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary type: BCP 69 (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
4
BCP 68  
BCP 68  
Q62702-C2126  
B
C
E
C
SOT-223  
BCP 68-10  
BCP 68-16  
BCP 68-25  
BCP 68-10 Q62702-C2127  
BCP 68-16 Q62702-C2128  
BCP 68-25 Q62702-C2129  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
V
V
CE0  
CES  
20  
25  
V
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
CB0  
EB0  
25  
5
I
I
I
I
C
1
A
Peak collector current  
Base current  
CM  
2
B
100  
200  
1.5  
150  
mA  
Peak base current  
Total power dissipation, T  
Junction temperature  
BM  
S
= 124 ˚C2)  
P
tot  
W
T
j
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
72  
17  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
01.97  
Semiconductor Group  
1
BCP 68  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V(BR)CE0  
V(BR)CES  
V(BR)CB0  
V(BR)EB0  
20  
25  
25  
5
V
IC  
= 30 mA, I  
B
= 0  
Collector-emitter breakdown voltage  
IC = 10 µA, VBE = 0  
Collector-base breakdown voltage  
= 10 µA, I = 0  
IC  
B
Emitter-base breakdown voltage  
= 10 µA, I = 0  
IE  
B
Collector-base cutoff current  
I
CB0  
EB0  
VCB = 25 V  
100  
100  
nA  
µA  
V
CB = 25 V, T  
A
= 150 ˚C  
Emitter-base cutoff current  
= 0  
I
100  
nA  
V
EB = 5 V, I  
C
DC current gain1)  
hFE  
50  
85  
85  
100  
160  
60  
100  
160  
250  
I
C
= 5 mA, VCE = 10 V  
= 500 mA, VCE = 1 V  
375  
160  
250  
375  
IC  
BCP 68  
BCP 68-10  
BCP 68-16  
BCP 68-25  
IC  
= 1 A, VCE = 1 V  
Collector-emitter saturation voltage1)  
= 1 A, I = 100 mA  
V
CEsat  
BE  
0.5  
V
IC  
B
Base-emitter voltage1)  
V
0.6  
1
I
C
= 5 mA, VCE = 10 V  
= 1 A, VCE = 1 V  
IC  
AC characteristics  
Transition frequency  
fT  
100  
MHz  
IC  
= 100 mA, VCE = 5 V, f = 100 MHz  
1)  
Pulse test conditions: t 300 µs, D = 2 %.  
Semiconductor Group  
2
BCP 68  
Total power dissipation Ptot = f (T  
A
*; TS  
)
Transition frequency f  
T
= f (I )  
C
* Package mounted on epoxy  
VCE = 5 V, f = 100 MHz  
Collector cutoff current ICB0 = f (T  
A
)
DC current gain hFE = f (I )  
C
V
CB = 25 V  
VCB = 1 V  
Semiconductor Group  
3
BCP 68  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IC  
= f (VCEsat  
)
IC  
= f (VBEsat)  
h
FE = 10  
h
FE = 10  
Permissible pulse load Ptot max/Ptot DC = f (t )  
p
Semiconductor Group  
4

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