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8050SDL-AE3-R [UTC]

Transistor;
8050SDL-AE3-R
型号： 8050SDL-AE3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
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UNISONIC TECHNOLOGIES CO., LTD  
8050S  
NPN EPITAXIAL SILICON TRANSISTOR  
LOW VOLTAGE HIGH  
CURRENT SMALL SIGNAL  
NPN TRANSISTOR  
2
ꢀ
DESCRIPTION  
The UTC 8050S is a low voltage high current small signal NPN  
transistor, designed for Class B push-pull audio amplifier and  
general purpose applications.  
1
3
SOT-23  
ꢀ
FEATURES  
*Collector current up to 700mA  
*Collector-Emitter voltage up to 20 V  
*Complementary to UTC 8550S  
*Pb-free plating product number: 8050SL  
PIN CONFIGURATION  
ꢀ
ꢀ
MARKING  
PIN NO.  
PIN NAME  
EMITTER  
COLLECTOR  
BASE  
1
2
3
D9  
ꢀ
ORDERING INFORMATION  
Order Number  
Package  
SOT-23  
Packing  
Normal  
Lead Free Plating  
8050SL-AE3-R  
8050S-AE3-R  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., LTD  
1 of 4  
QW-R206-001,C  
8050S  
NPN EPITAXIAL SILICON TRANSISTOR  
ꢀ
ABSOLUTE MAXIMUM RATING ( Ta=25℃, unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
PC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
30  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Dissipation(Ta=25℃)  
Collector Current  
20  
V
5
1
V
W
IC  
700  
mA  
℃
℃
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO Ic = 100µA, IE = 0  
BVCEO Ic = 1mA, IB = 0  
BVEBO IE = 100µA, Ic =0  
30  
20  
5
V
V
V
ICBO  
IEBO  
hFE1  
hFE2  
hFE3  
VCB = 30V,IE = 0  
VEB = 5V, Ic = 0  
1
uA  
nA  
Emitter Cut-Off Current  
100  
VCE = 1V, Ic = 1mA  
100  
120  
40  
DC Current Gain(note)  
VCE = 1V, Ic = 150 mA  
VCE = 1V, Ic = 500mA  
400  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCEO(SAT) Ic = 500mA, IB = 50mA  
VBEO(SAT) Ic = 500mA, IB = 50mA  
VBEO(SAT) VCE = 1V, Ic = 10mA  
0.5  
1.2  
1.0  
V
V
V
fT  
VCE = 10V, Ic = 50mA  
100  
MHz  
pF  
Cob  
VCB = 10V, IE = 0, f = 1MHz  
9.0  
ꢀ
CLASSIFICATION OF hFE2  
RANK  
C
D
E
RANGE  
120-200  
160-300  
280-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-001,C  
www.unisonic.com.tw  
8050S  
NPN EPITAXIAL SILICON TRANSISTOR  
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS  
Static Characteristics  
IB = 3.0mA  
DC Current Gain  
103  
0.5  
0.4  
VCE = 1V  
IB = 2.0mA  
IB = 1.5mA  
IB = 1.0mA  
IB = 0.5mA  
102  
101  
100  
0.3  
0.2  
0.1  
0
10-1  
100  
101  
102  
103  
0
0.4  
0.8  
1.2 1.6 2.0  
Collector-Emitter Voltage ( V)  
Collector Current, Ic(mA)  
Base-Emitter on Voltage  
Saturation Voltage  
104  
102  
101  
IC = 10*IB  
VCE = 1V  
VBE(SAT)  
103  
102  
101  
100  
VBE(SAT)  
10-1  
10-1  
100  
101  
102  
103  
0
0.2  
0.4  
0.6  
0.8 1.0  
Collector Current, Ic(mA)  
Base-Emitter Voltage (V)  
Current Gain-Bandwidth Product  
Collector Output Capacitance  
103  
102  
103  
102  
VCE = 10V  
f = 1MHz  
IE = 0  
101  
100  
101  
100  
100  
101  
102  
103  
100  
102  
103  
101  
Collector-Base Voltage (V)  
Collector Current, Ic(mA)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-001,C  
www.unisonic.com.tw  
8050S  
NPN EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-001,C  
www.unisonic.com.tw  

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