8050SG-D-AE3-R [UTC]
Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3;型号: | 8050SG-D-AE3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 0.7A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 放大器 光电二极管 晶体管 |
文件: | 总4页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
8050S
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC 8050S is a low voltage high current small signal NPN
transistor, designed for Class B push-pull audio amplifier and
general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20V
*Complementary to UTC 8550S
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Packing
Package
Halogen-Free
1
E
E
E
2
B
C
C
3
C
B
B
8050SL-x-AE3-R
8050SL-x-T92-B
8050SL-x-T92-K
8050SG-x-AE3-R
8050SG-x-T92-B
8050SG-x-T92-K
SOT-23
TO-92
TO-92
Tape Reel
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
MARKING
SOT-23
TO-92
www.unisonic.com.tw
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R206-001.H
8050S
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
20
V
5
700
V
mA
mW
W
SOT-23
TO-92
350
Collector Dissipation(TA=25°C)
PC
1
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC = 100μA, IE = 0
BVCEO IC = 1mA, IB = 0
BVEBO IE = 100μA, IC =0
30
20
5
V
V
V
ICBO
IEBO
hFE1
hFE2
hFE3
VCB = 30V,IE = 0
1
uA
nA
Emitter Cut-Off Current
VEB = 5V, IC = 0
100
VCE = 1V, IC = 1mA
VCE = 1V, IC = 150 mA
VCE = 1V, IC = 500mA
100
120
40
DC Current Gain (note)
400
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) VCE = 1V, IC = 10mA
0.5
1.2
1.0
V
V
V
fT
VCE = 10V, IC = 50mA
100
MHz
pF
Cob
VCB = 10V, IE = 0, f = 1MHz
9.0
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-001.H
www.unisonic.com.tw
8050S
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOICO., LTD
3 of 4
QW-R206-001.H
www.unisonic.com.tw
8050S
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-001.H
www.unisonic.com.tw
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