60N06G-TF3-T [UTC]
60A, 60V N-CHANNEL POWER MOSFET; 60A ， 60V N沟道功率MOSFET
| 型号： | 60N06G-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60A, 60V N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
60N06
Power MOSFET
60A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 60N06 is N-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
FEATURES
* RDS(ON) = 18mΩ @VGS = 10 V
* Ultra low gate charge ( typical 39nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 115pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
60N06L-TA3-T
60N06L-TF3-T
60N06L-TQ2-R
60N06L-TQ2-T
60N06G-TA3-T
60N06G-TF3-T
60N06G-TQ2-R
60N06G-TQ2-T
TO-220
TO-220F
TO-263
TO-263
Tube
Tube
G
G
G
G
D
D
D
D
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd.
QW-R502-121.C
60N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
VGS
±20
V
TC = 25°C
60
A
Continuous Drain Current
Drain Current Pulsed (Note 2)
Avalanche Energy
ID
TC = 100°C
39
A
IDM
EAS
EAR
120
A
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220
1000
180
mJ
mJ
100
Power Dissipation
(TC=25°C)
TO-220F
PD
70.62
54
W
TO-263
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-263
TO-220
TO-220F
TO-263
110
1.25
Junction to Case
θJC
1.77
°C/W
2.31
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
60
V
1
μA
nA
Forward
100
Gate-Source Leakage Current
IGSS
Reverse
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
18
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 30A
14
mΩ
CISS
COSS
CRSS
2000
400
pF
pF
pF
Output Capacitance
VGS = 0V, VDS =25V, f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
115
tD(ON)
tR
tD(OFF)
tF
12
11
25
15
39
12
10
30
30
50
30
60
ns
ns
Rise Time
VDD=30V, ID=60A, RL=0.5Ω,
VGS=10V (Note 2, 3)
Turn-Off Delay Time
ns
Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS = 30V, VGS = 10 V
ID = 60A (Note 2, 3)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge (Miller Charge)
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QW-R502-121.C
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60N06
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
VGS = 0 V, IS = 60A
1.6
60
V
A
ISM
trr
120
60
ns
IS=60A, VGS=0V, dIF/dt=100A/μs
QRR
3.4
μC
Note: 1. ISD≤60A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25℃
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
3. Essentially independent of operating temperature.
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QW-R502-121.C
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60N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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60N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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60N06
Power MOSFET
TYPICAL CHARACTERISTICS
Transconductance
On-Resistance vs. Drain Current
70
60
50
40
30
20
0.020
0.016
Tc = -55℃
25℃
VGS = 10V
125℃
0.012
0.008
0.004
10
0
0
0
10
20
30
40
50
0
20
40
60
80
100
Gate-to-Source Voltage, VGS (V)
Drain Current, ID (A)
Capacitance
Gate Charge
3000
2500
2000
1500
10
VGS = 10V
ID = 60A
8
6
4
2
0
Ciss
1000
500
Coss
Crss
0
0
10
20
30
40
0
10
20
30
40
Drain-to-Source Voltage, VDS (V)
Total Gate Charge, QG (nC)
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60N06
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.
01
10-5
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (sec)
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60N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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