3N90L-TF2-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 3N90L-TF2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N90
Power MOSFET
3A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N90 provides excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 4.8 Ω @ VGS = 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
RDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
3N90L-TA3-T
3N90L-TC3-T
3N90L-TF3-T
3N90L-TF1-T
3N90L-TF2-T
3N90L-TQ2-T
3N90L-TQ2-R
3N90G-TA3-T
3N90G-TC3-T
3N90G-TF3-T
3N90G-TF1-T
3N90G-TF2-T
3N90G-TQ2-T
3N90G-TQ2-R
TO-220
TO-230
G
G
G
G
G
G
G
D
D
D
D
D
D
D
S
Tube
Tube
S
S
S
S
S
S
TO-220F
TO-220F1
TO-220F2
TO-263
Tube
Tube
Tube
Tube
TO-263
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
3N90L-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2) TA3: TO-220, TC3: TO-230, TF3: TO-220F,
TF1: TO-220F1, TF2: TO-220F2, TQ2: TO-263
(3) L: Lead Free, G: Halogen Free and Lead Free
(2)Package Type
(3)Green Package
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-290.D
3N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VDGR
VGSS
BVGSO
ID
RATINGS
900
UNIT
V
Drain-Source Voltage (VGS=0V)
Drain-Gate Voltage (RG=20kΩ)
Gate-Source Voltage
900
V
±30
V
Gate-Source Breakdown Voltage (IGS=±1mA)
Continuous Drain Current
30(MIN)
3
V
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
180
mJ
V/ns
dv/dt
4.5
TO-220/TO-263
TO-230
90
Power Dissipation
PD
W
TO-220F/TO-220F1
TO-220F2
25
26
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX)
.
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220/ TO-263
TO-230
1.38
θJC
°C/W
TO-220F/TO-220F1
TO-220F2
5
4.9
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3N90
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
900
V
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
1
μA
IGSS
±10 μA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
3
3.75 4.5
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
4.1 4.8
2.1
CISS
COSS
560
69
pF
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
VGS=0V, VDS=0V~400V
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
CRSS
11
COSS(EQ)
34
tD(ON)
tR
tD(OFF)
tF
56
78
ns
ns
Turn-On Rise Time
VDS=30V, ID=0.5A, RG=25Ω
Turn-Off Delay Time
140
72
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
25.9
7
nC
nC
nC
Gate-Source Charge
QGS
QGD
VDS=50V, ID=1.3A, VGS=10V
Gate-Drain Charge
7.6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
Source-Drain Current
VSD
ISD
ISD=3A ,VGS=0V
1.6
3
V
A
A
Source-Drain Current (Pulsed)
ISDM
12
≦
Notes: 1. Pulse width=300μs, Duty cycle 1.5%
Note: 2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS
.
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3N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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3N90
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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3N90
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
300
250
200
150
100
50
150
100
50
0
0
0
0
1
200
400
600
800 1000
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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