3N90L-TN3-R [UTC]
N-CHANNEL FAST SWITCHING MOSFET;
| 型号： | 3N90L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL FAST SWITCHING MOSFET 开关 |
| 文件： | 总5页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N90-E
Power MOSFET
3A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N90-E provides excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
RDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
3
Lead Free
3N90L-TM3-T
3N90L-TMS2-T
3N90L-TN3-R
Halogen Free
1
2
D
D
D
3N90G-TM3-T
3N90G-TMS2-T
3N90G-TN3-R
TO-251
TO-251S2
TO-252
G
G
G
S
S
S
Tube
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-007.C
3N90-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VDGR
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage (VGS=0V)
Drain-Gate Voltage (RG=20kΩ)
Gate-Source Voltage
900
900
V
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current
3
3
A
ID
A
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
EAS
100
mJ
V/ns
W
dv/dt
PD
4.5
45
Junction Temperature
TJ
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 22.2mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX)
.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.77
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note)
DYNAMIC CHARACTERISTICS
Input Capacitance
BVDSS
IDSS
VGS=0V, ID=250μA
900
V
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
1
μA
IGSS
±10 μA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
3.0 4.1 5.0
5.0 6.2
2.1
V
Ω
S
CISS
COSS
CRSS
430
47
pF
pF
pF
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
7.7
tD(ON)
tR
tD(OFF)
tF
45
56
ns
ns
Turn-On Rise Time
VDS=30V, ID=0.5A, RG=25Ω
Turn-Off Delay Time
80
ns
Turn-Off Fall Time
52
ns
Total Gate Charge
QG
19.25
5.3
5
nC
nC
nC
VDD=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note)
Source-Drain Current
VSD
ISD
ISD=3A ,VGS=0V
1.6
3
V
A
A
Source-Drain Current (Pulsed)
ISDM
12
≦
Note: Pulse width=300μs, Duty cycle 1.5%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R205-007.C
www.unisonic.com.tw
3N90-E
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R205-007.C
www.unisonic.com.tw
3N90-E
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R205-007.C
www.unisonic.com.tw
3N90-E
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
300
250
200
150
100
50
150
100
50
0
0
0
0
1
200
400
600
800 1000
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R205-007.C
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明