2SD313-F-TA3-T [UTC]
NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
| 型号： | 2SD313-F-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总1页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-220 Plastic-Encapsulate Transistors
2SD313 TRANSISTOR (NPN)
TO-220
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
3. EMITTER
PCM:
1.75
W (Tamb=25℃)
Collector current
ICM:
1 2 3
3
A
V
Collector-base voltage
V(BR)CBO
:
60
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
MIN
60
60
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=100µA, IC=0
VCB=60V, IE=0
VCE=60V, IE=0
VEB=4V, IC=0
µA
mA
µA
100
1
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
100
320
hFE(1)
VCE=2V, IC=1A
40
40
DC current gain
hFE(2)
V
CE=2V, IC=0.1A
IC=2A, IB=200mA
CE=2V, IC=1A
VCE(sat)
VBE
V
V
Collector-emitter saturation voltage
Base-emitter voltage
1
V
1.5
MHz
pF
Transition frequency
fT
VCE=5V, IC=500mA
CB=10V, IE=0,f=1MHz
8
Cob
Collector output capacitance
V
65
CLASSIFICATION OF hFE(1)
Rank
C
D
E
F
Range
40-80
60-120
100-200
160-320
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