2SD313G-C-TF3-T [UTC]
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN;
| 型号： | 2SD313G-C-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD313
NPN SILICON TRANSISTOR
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SD313 is designed for use in general
purpose amplifier and switching applications.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
2SD313L-x-TA3-T
2SD313L-x-TF3-T
2SD313G-x-TA3-T
2SD313G-x-TF3-T
TO-220
TO-220F
Tube
Tube
www.unisonic.com.tw
1 of 4
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R203-001,E
2SD313
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
60
V
5
3
V
A
Collector Dissipation
Junction Temperature
Storage Temperature
PC
1.75
W
°C
°C
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(TA=25°C)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=1mA
MIN
60
60
5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC=10mA
V
IE=100uA
V
VCB=20V, IE=0
VEB=4V, IC=0
0.1
1.0
1.0
1.5
mA
mA
V
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter On voltage
Gain Band width Product
VCE(SAT) IC=2A, IB=0.2A
VBE(ON)
fT
VCE=2V, IC=1A
VCE= 5V, IC= 0.5A
V
MHz
8
IC=1A, VCE=2V
IC=0.1A,VCE=2V
40
40
320
DC Current Gain
hFE
CLASSIFICATION ON hFE
RANK
C
D
E
F
RANGE
40-80
60-120
100-200
160-320
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R203-001,E
www.unisonic.com.tw
2SD313
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
VBE(SAT) vs. IC
SOA
10000
1000
100
10
IC=10IB
20mS
dc
1
0.1
10
100
1000
10000
1
10
100
Collector Current (mA)
Collector to Emitter Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R203-001,E
www.unisonic.com.tw
2SD313
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R203-001,E
www.unisonic.com.tw
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UTC
2SD313L-C-TF3-T
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
UTC
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