2SD1898R-G [UTC]
暂无描述;
| 型号： | 2SD1898R-G |
| 厂家： | 
Unisonic Technologies |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
*High VCEO= 80V
*High IC= 1A (DC)
1
*Good hFE linearity.
*Low VCE(sat)
*Complements the 2SB1260.
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Ic
RATING
UNIT
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
100
80
5
1
Collector Current(DC)
Collector Current(PULSE)*1
Collector Power Dissipation*2
Collector Power Dissipation*2
Junction Temperature
Icp
Pc
Pc
Tj
2
0.5
2
A
W
W
°C
°C
150
-55 ~ +150
Storage Temperature
TSTG
*1 Duty=/1/2,Pw=200ms
*2 When mounted on a 40*40*0.7 mm ceramic board.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic= 50μA
MIN TYP MAX UNIT
100
80
5
V
V
V
μA
μA
Ic= 1mA
IE=50μA
VCB=80V, IE=0A
VEB=4V , IC=0A
VCE=3V,Ic= 0.5A
1
1
IEBO
hFE
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
82
390
0.4
VCE(sat) Ic=500mA,IB= 20mA
0.15
100
20
V
MHz
pF
fT
VCE= 10V, IE= -50 mA, f=100MHz
Output Capacitance
Cob
VCB= 10V, IE= 0 A, f=1MHz
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-030,A
UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
Figure 1.Grounded Emitter
Propagation Characteristics
Figure 2.Grounded Emitter
Output Characteristics
1000
100
10
Ta=25 ℃
VCE = 5V
Ta=25 ℃
6mA
5mA
1.0
4mA
3mA
0.8
0.6
2mA
0.4
0.2
0
1mA
1
IB =0mA
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base to Emitter Voltage:V BE (V)
0
1.8 2.0
0
2
4
6
8
10
CE (V)
Collector to Emitter Voltage:V
Figure 3.DC Current Gain
vs.Collector Current
Figure 4.Collector-emitter Saturation
Voltage vs.Collector Current
Ta=25℃
Ta=25 ℃
2.0
1.0
1000
0.5
VCE = 3V
0.2
0.1
100
0
Ic/IB=20/1
Ic/IB=10/1
VCE = 1V
0.05
0.02
0.01
0
10
100
1000
0
10
100
1000
Collector Current : Ic(mA)
Figure 5. Gain Bandwidth Product
vs.Emitter Current
Collector Current : Ic(mA)
Figure 6.CollectorOutput Capacitance
vs.Collector-Base Voltage
1000
Ta=25 ℃
Ta=25 ℃
V CE = 5V
f=1MHz
I E=0A
I c=0A
500
200
100
100
10
1
50
20
10
5
2
0.1 0.2 0.5
Emitter To Base Voltage :V CB (V)
Collector To Base Voltage :V CB (V)
1
2
5
10 20
50 100
1
2
5 10 20
50 100200 5001000
Emitter Current: -I E (mA)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-030,A
UTC2SD1898 NPN EPITAXIAL SILICON TRANSISTOR
Figure 7.Safe O perating Area
10
Ic max
5
(pulse)
2
1
DC
500m
200m
100m
50m
20m
10m
5m
2m
Ta=25℃
Single non-repetitive
pulse
1m
500
1000
5
0.1
0.5
1
10
100
200
0.2
20 50
2
Collector to Emitter Voltage:VCE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-030,A
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