2SD1898T100P [ROHM]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-62, 3 PIN;型号: | 2SD1898T100P |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-62, 3 PIN 开关 晶体管 |
文件: | 总8页 (文件大小:373K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SD1898 / 2SD1733
Datasheet
NPN 1.0A 80V Middle Power Transistor
lOutline
Collector
MPT3
CPT3
Base
Parameter
VCEO
IC
Value
80V
Base
Collector
Emitter
1.0A
Emitter
2SD1898
(SC-62)
2SD1733
(SC-63)
lFeatures
<SOT-89>
<SOT-428>
1) Suitable for Middle Power Driver
2) Complementary PNP Types : 2SB1260 / 2SB1181
3) Low VCE(sat)
VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)
4) Lead Free/RoHS Compliant.
lInner circuit
Collector
lApplications
Motor driver , LED driver
Power supply
Base
Emitter
lPackaging specifications
Package
Taping
Basic
ordering
unit (pcs)
Reel size Tape width
Part No.
Package
size
Marking
code
(mm)
(mm)
(mm)
2SD1898
2SD1733
MPT3
CPT3
4540
6595
T100
TL
180
330
12
16
1,000
2,500
DF
D1733
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
1/7
Data Sheet
2SD1898 / 2SD1733
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
120
80
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
5
V
1.0
2.0
A
DC
Collector current
*1
A
Pulsed
ICP
0.5 *2
2.0 *3
1 *4
W
2SD1898
Power dissipation
W
W
PD
2SD1733
10 *5
150
W
°C
°C
Tj
Junction temperature
Tstg
Range of storage temperature
-55 to +150
*1 Pw=20ms , duty=1/2
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7 mm)
*4 Mounted on a substrate
*5 TC=25°C
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-emitter
breakdown voltage
Symbol
Conditions
IC = 1mA
Min.
80
Typ.
-
Max.
Unit
V
BVCEO
-
Collector-base
breakdown voltage
BVCBO
BVEBO
ICBO
IC = 50mA
IE = 50mA
VCB = 100V
VEB = 4V
120
-
-
V
V
Emitter-base
breakdown voltage
5
-
-
-
Collector cut-off current
Emitter cut-off current
-
1
1
mA
mA
V
IEBO
-
-
Collector-emitter
saturation voltage
VCE(sat) IC = 500mA, IB = 20mA
-
0.15
-
0.40
390
-
*6
VCE = 3V, IC = 0.5A
hFE
DC current gain
120
-
VCE = 10V, IE = -50mA
f=100MHZ
fT
Transition frequency
Output capacitance
-
-
100
20
MHz
pF
VCB = 10V, IE = 0A
f = 1MHz
Cob
-
lhFE rank categories
Rank
Q
R
hFE
120 to 270
180 to 390
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
2/7
Data Sheet
2SD1898 / 2SD1733
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Typical Output Characteristics
Fig.1 Ground Emitter Propagation Characteristics
1000
VCE= 5V
Pulsed
100
10
Ta=100ºC
25ºC
-40ºC
1
0.1
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE [V]
COLECTOR TO EMITTE VOLTAGE : VCE [V]
Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC Current Gain vs. Collector Current(II)
1000
100
10
1000
100
10
VCE= 3V
Pulsed
Ta=25ºC
Pulsed
VCE= 3V
1V
Ta=100ºC
25ºC
-40ºC
1
10
100
1000
10000
1
10
100
1000
10000
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
3/7
Data Sheet
2SD1898 / 2SD1733
lElectrical characteristic curves(Ta = 25°C)
Fig.6 Collector-Emitter Saturation Voltage
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
vs. Collector Current (I)
1
1
IC / IB = 20
Ta=25ºC
Ta=100ºC
IC / IB =20/1
10/1
0.1
0.1
25ºC
-40ºC
0.01
0.01
1
10
100
1000
10000
1
10
100
1000
10000
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
Fig.8 Gain Bandwidth Product
vs. Emitter Current
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
10
Ta= -40ºC
25ºC
100ºC
1
IC / IB = 20
1000 10000
COLLECTOR CURRENT : IC [mA]
0.1
1
10
100
EMITTER CURRENT : IE [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
4/7
Data Sheet
2SD1898 / 2SD1733
lElectrical characteristic curves(Ta = 25°C)
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Fig.10 Safe Operating Area
Collector output capacitance vs.
Collector-Base Voltage
10
1ms
10ms
2SD1898
1
0.1
100ms
DC
(Mounted on a
reference land)
0.01
Ta=25ºC
Single non repetitive pulse
0.001
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
Fig.11 Safe Operating Area
10
1ms
2SD1733
10ms
1
0.1
100ms
DC
0.01
Ta=25ºC
Single non repetitive pulse
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
5/7
Data Sheet
2SD1898 / 2SD1733
lDimensions (Unit : mm)
D
b1
A
MPT3
b2
c
b
b4
x S A
e1
e
β
b3
b5
y
S
e1
S
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MILIMETERS
INCHES
MAX
DIM
MIN
1.40
0.30
1.50
0.40
0.35
4.40
2.40
MAX
1.50
0.50
1.70
0.60
0.50
4.70
2.70
MIN
A
b
b1
b2
c
D
E
e
e1
HE
LE
Lp
x
0.055
0.012
0.059
0.016
0.014
0.173
0.094
0.059
0.020
0.067
0.024
0.020
0.185
0.106
0.118
0.059
0.169
0.047
0.056
0.006
0.004
3.00
1.50
3.70
0.80
1.01
-
4.30
1.20
1.41
0.15
0.10
0.146
0.031
0.040
-
y
-
-
MILIMETERS
MIN
INCHES
MAX
DIM
MAX
0.65
1.70
0.75
1.71
0.58
3.72
MIN
-
-
-
-
b3
b4
b5
l1
l2
l3
-
-
-
-
-
-
0.026
0.067
0.030
0.067
0.023
0.146
45°
-
-
β
45°
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
6/7
Data Sheet
2SD1898 / 2SD1733
A2
lDimensions (Unit : mm)
B
D
A
b1
c1
CPT3
A1
b2
b3
c
e
b
x
B A
l3
A3
l1
l2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MILIMETERS
MIN
INCHES
DIM
MAX
0.15
2.50
MIN
0.000
0.087
MAX
0.006
0.098
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
HE
L
L1
L2
L3
L4
Lp
x
0.00
2.20
0.25
0.010
0.55
5.00
0.75
5.30
0.022
0.197
0.030
0.209
5.00
0.75
0.197
0.030
0.40
0.40
6.30
5.40
0.60
0.60
6.70
5.80
0.016
0.016
0.248
0.213
0.024
0.024
0.264
0.228
2.30
0.091
9.00
2.20
0.80
1.20
10.00
2.80
1.40
1.80
0.354
0.087
0.031
0.047
0.394
0.110
0.055
0.071
5.30
0.90
0.209
0.035
1.00
-
1.60
0.25
0.039
-
0.063
0.010
MILIMETERS
MIN
INCHES
DIM
MAX
1.00
5.20
2.50
5.50
10.00
MIN
-
-
-
-
MAX
0.04
0.205
0.098
0.217
0.394
b5
b6
l1
l2
l3
-
-
-
-
-
-
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
2013.05 - Rev.F
7/7
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
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