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2SC5200L-R-T3N-T [UTC]

Power Bipolar Transistor,;
2SC5200L-R-T3N-T
型号： 2SC5200L-R-T3N-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor,
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UNISONIC TECHNOLOGIES CO., LTD  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
POWER AMPLIFIER  
APPLICATIONS  
1
1
TO-3P  
TO-3PB  
FEATURES  
* Recommended for 100W High Fidelity Audio Frequency  
Amplifier Output Stage.  
* Complementary to UTC 2SA1943  
1
TO-3PN  
TO-3PL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
2SC5200L-x-T3P-T  
Halogen Free  
1
B
B
B
B
2
3
E
E
E
E
2SC5200G-x-T3P-T  
2SC5200G-x-T3B-T  
2SC5200G-x-T3L-T  
2SC5200G-x-T3N-T  
TO-3P  
TO-3PB  
TO-3PL  
TO-3PN  
Tube  
Tube  
Tube  
Tube  
C
C
C
C
2SC5200L-x-T3B-T  
2SC5200L-x-T3L-T  
2SC5200L-x-T3N-T  
Note: Pin Assignment: B: Base  
C: Collector  
E: Emitter  
(1) T: Tube  
2SC5200G-x-T3P-T  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(2) T3P: TO-3P, T3B: TO-3PB, T3L: TO-3PL  
T3L: TO-3PN  
(3) Rrefer to CLASSIFICATION OF hFE1  
(4) G: Halogen Free and Lead Free, L: Lead Free  
(4)Green Package  
MARKING  
UTC  
2SC5200  
L: Lead Free  
G: Halogen Free  
Date Code  
Lot Code  
1
www.unisonic.com.tw  
Copyright © 2019 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R214-005.D  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
230  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
230  
V
5
V
15  
A
Base Current  
IB  
1.5  
A
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
PC  
150  
W
°C  
°C  
TJ  
+150  
-55 ~ 150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
V(BR) CEO  
VCE(SAT)  
VBE  
TEST CONDITIONS  
IC= 50mA, IB=0  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base -Emitter Voltage  
230  
V
V
IC= 8A, IB= 0.8A  
0.4  
1.0  
3.0  
1.5  
5.0  
5.0  
160  
VCE= 5V, IC= 7A  
VCB = 230V, IE=0  
VEB= 5V, IC=0  
V
Collector Cut-off Current  
ICBO  
μA  
μA  
Emitter Cut-off Current  
IEBO  
hFE1  
VCE= 5V, IC= 1A  
VCE= 5V, IC= 7A  
VCE= 5V, IC= 1A  
VCB= 10V, IE=0, f=1MHz  
55  
35  
DC Current Gain  
hFE2  
60  
30  
Transition Frequency  
fT  
MHz  
pF  
Collector Output Capacitance  
COB  
200  
CLASSIFICATION OF hFE1  
RANK  
Range  
R
O
55 ~ 110  
80 ~ 160  
UNISONICTECHNOLOGIESCO.,LTD  
2 of 4  
QW-R214-005.D  
www.unisonic.com.tw  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current vs.  
Base-Emitter Voltage  
Collector Current vs.  
Collector-Emitter Voltage  
20  
20  
16  
12  
COMMON EMITTER  
TC=25°C  
COMMON EMITTER  
16  
800  
VCE = 5V  
600  
400  
300  
12  
250  
200  
150  
100  
8
8
4
0
IB = 10mA  
50  
40  
30  
TC =100°C  
25  
4
0
20  
-25  
0.8  
Base-Emitter Voltage, VBE (V)  
0
2
4
6
10  
0
0.4  
1.2  
1.6  
2.0  
8
Collector-Emitter Voltage, VCE (V)  
Collector-Emitter Saturation Voltage vs.  
Collector Current  
DC Current Gain vs. Collector Current  
300  
3
1
TC =100℃  
25  
100  
-25  
30  
10  
0.3  
0.1  
TC =100℃  
25  
-25  
COMMON EMITTER  
IC / IB = 10  
3
1
0.03  
0.01  
COMMON EMITTER  
IC / IB = 10  
10  
100  
0.1  
10  
100  
0.01  
0.1  
1
0.01  
1
Collector Current, IC (A)  
Collector Current, IC (A)  
Safe Operating Area  
50  
C MAX. (PULSED)  
30 I  
IC MAX.  
1ms  
(CONTINUOUS)  
10ms  
10  
5DC OPERATION  
100ms  
3TC =25°C  
1
0.5  
0.3  
SINGLE NONREPETITIVE  
PULSE TC = 25°C  
CURVES MUST BE  
DERATED LINEARLY  
WITH INCREASE IN  
TEMPERATURE.  
VCEO  
MAX.  
0.1  
0.05  
0.03  
3
10  
30  
100  
300 1000  
Collector-Emitter Voltage, VCE (V)  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 4  
QW-R214-005.D  
www.unisonic.com.tw  
2SC5200  
NPN EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
4 of 4  
QW-R214-005.D  
www.unisonic.com.tw  

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