2SC3468G-E-AB3-R [UTC]
Small Signal Bipolar Transistor;
| 型号： | 2SC3468G-E-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor 放大器 晶体管 |
| 文件： | 总5页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FOR VIDEO OUTPUT OF
HIGH-DEFINITION CRT
DISPLAYS
FEATURES
* High breakdown voltage: VCBO, VCEO≧300V
* Small reverse transfer capacitance and excellent high frequency
characteristicF
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
SOT-89
Packing
1
2
3
2SC3468G-x-AB3-R
B
C
E
Tape Reel
Note: Pin Assignment: B: Base C: Collector E: Emitter
MARKING
www.unisonic.com.tw
1 of 5
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R208-037.B
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
300
UNIT
V
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
300
V
5
V
100
mA
mA
W
Collector Current (Pulse)
Collector Dissipation
ICP
200
PC
1.0
°C
°C
Junction Temperature
Storage Temperature
TJ
0 ~ +125
-65 ~ +125
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB = 200V, IE = 0
VEB = 4V, IC = 0
MIN
40
TYP MAX UNIT
Collector Cutoff Current
0.1
0.1
µA
µA
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
VCE = 10V, IC = 10mA
VCE = 30V, IC = 10mA
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
IC = 10µA, IE = 0
320
Gain-Bandwidth Product
fT
150
MHz
V
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
VCE (sat)
VBE (sat)
V(BR) CBO
V(BR) CEO
V(BR) EBO
Cob
0.6
1.0
V
300
300
5
V
IC = 1mA, RBE = ∞
IE = 10µA, IC = 0
V
V
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
2.6
1.8
pF
pF
Reverse Transfer Capacitance
Cre
CLASSIFICATION of hFE
RANK
C
D
E
F
RANGE
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-037.B
www.unisonic.com.tw
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R208-037.B
www.unisonic.com.tw
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R208-037.B
www.unisonic.com.tw
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R208-037.B
www.unisonic.com.tw
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