2SC3468L-D [UTC]
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3;
| 型号： | 2SC3468L-D |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3 晶体 显示器 晶体管 输出元件 高压 |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR FOR
VIDEO OUTPUT OF HIGH-DEFINITION
CRT DISPLAYS
FEATURES
1
* High breakdown voltage: VCBO, VCEO≧300V
* Small reverse transfer capacitance and excellent high
frequency characteristicF
SOT-89
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SC3468L
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
SYMBOL
RATINGS
300
UNIT
V
V
VCBO
VCEO
VEBO
IC
ICP
PC
300
5
100
200
V
mA
mA
W
1.0
0 ~ +125
-65 ~ +125
℃
Junction Temperature
Storage Temperature
TJ
TSTG
℃
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
SYMBOL
ICBO
IEBO
hFE
fT
VCE (sat)
VBE (sat)
TEST CONDITIONS
VCB = 200V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 10mA
VCE = 30V, IC = 10mA
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
MIN
40
TYP MAX UNIT
0.1
0.1
320
µA
µA
150
MHz
V
V
0.6
1.0
V(BR) CBO IC = 10µA, IE = 0
IC = 1mA, RBE = ∞
V(BR) EBO IE = 10µA, IC = 0
300
300
5
V
V
V(BR) CEO
V
pF
pF
Cob
Cre
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
2.6
1.8
Reverse Transfer Capacitance
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com.tw
QW-R208-037,A
UTC 2SC3468
CLASSIFICATION of hFE
NPN EPITAXIAL SILICON TRANSISTOR
RANK
RANGE
C
D
E
F
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
TYPICAL CHARACTERS
IC - VCE
IC - VCE
-20
10
9
8
60μA
50μA
-18
-16
-14
-12
-10
-8
120μA
100μA
7
40μA
30μA
20μA
80μA
6
5
4
3
2
60μA
40μA
-6
20μA
10μA
-4
1
0
-2
0
IB = 0
IB = 0
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Collector-to-Emitter Voltage, VCE (V)
0
10 20 30 40 50 60 70 80 90 100
Collector-to-Emitter Voltage, VCE (V)
hFE - IC
fT - IC
1000
1000
VCE = 10V
VCE = 30V
7
7
5
5
3
2
Ta = 75℃
25℃
3
2
-25℃
100
100
7
7
5
5
3
2
3
2
10
10
5 7
2
3
5 7
2
3
5 7
2
5 7
2
3
5 7
2
3
5 7
100
2
1.0
10
100
1.0
10
Collector Curcuit, Ic (mA)
Collector Curcuit, Ic (mA)
Cob - VCB
Cre - VCB
3
2
3
2
f = 1MHz
f = 1MHz
10
10
7
5
7
5
3
2
3
2
1.0
1.0
7
7
5
5
5 7
2
3
5 7
2
3
5 7
2
5 7
2
3
5 7
2
3
5 7
100
2
1.0
10
100
1.0
10
Collector-to-Base Voltage, VCB (V)
Collector-to-Base Voltage, VCB (V)
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com.tw
QW-R208-037,A
UTC 2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
VCE (sat) - IC
VBE (sat) - IC
10
10
7
5
IC / IB = 10
IC / IB = 10
7
5
3
2
3
2
1.0
7
5
3
2
1.0
7
5
0.1
7
5
3
3
5 7
2
3
5 7
2
3
5 7
2
1.0
160
5 7
2
3
5 7
2
3
5 7
100
2
1.0
10
100
1.0
10
Collector Current, Ic (mA)
Collector Current, Ic (mA)
IC - VBE
A S O
120
100
3
2
ICP
VCE = 10V
IC
100
7
5
80
60
40
3
2
10
7
5
20
0
3
2
0
0.2
0.4
0.6
0.8
5 7
2
3
5
7
2
3
5
10
100
Base-to-Emitter Voltage, VBE (V)
Collector-to-Emitter Voltage, VCE (V)
Pc - Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20 40 60 80 100 120 140
Ambient Temperature, Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
www.unisonic.com.tw
QW-R208-037,A
相关型号：
2SC3470DRF
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
HITACHI
2SC3470DRR
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
HITACHI
2SC3470DTZ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
HITACHI
©2020 ICPDF网 联系我们和版权申明