2SC3356_09 [UTC]
HIGH FREQUENCY LOW NOISE AMPLIFIER; 高频低噪声放大器
| 型号： | 2SC3356_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH FREQUENCY LOW NOISE AMPLIFIER |
| 文件： | 总4页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
DESCRIPTION
The UTC 2SC3356 is designed for such applications as: DC/DC
converters, supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
FEATURES
* Low Noise and High Gain
* High Power Gain
ORDERING INFORMATION
Ordering Number
Pin Description
Package
SOT-23
Packing
Normal
Lead Free Plating
Halogen Free
1
2
3
2SC3356-x-AE3-R 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R
E
B
C
Tape Reel
MARKING
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R206-024,D
2SC3356
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
IC
RATINGS
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
20
12
V
3
V
100
mA
mW
°С
°С
Power Dissipation
PD
200
Junction Temperature
Storage Temperature
TJ
150
TSTG
-65~ +150
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
IEBO
hFE
TEST CONDITIONS
VCB =10 V,IE =0
MIN TYP MAX UNIT
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
1.0
1.0
300
μA
μA
VEB =1 V, IC=0
VCE =10 V, IC =20 mA
VCE =10 V, IC =20 mA
VCB =10 V, IE =0, f =1.0MHz
VCE =10 V, IC =7mA, f =1.0GHz
50
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure
fT
7
GHz
pF
CRE
NF
1.0
2.0
dB
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
50-160
160-240
240-300
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-024,D
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UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain vs. Collector Current
VCE=10V
Insertion Gain vs. Collector Current
15
200
100
50
10
5
20
10
VCE=10V
f=1.0GHz
0
0.5
1
10
Collector Current, IC (mA)
50
5
70
50
0.5
1
5
10
Collector Current, IC (mA)
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Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-024,D
UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Noise Figure, Forward Insertion Gain
vs. Collector to Emitter Voltage
Noise Figure vs. Collector Current
VCE=10V
f=1.0GHz
7
5
4
f=1.0GHz
IC=20mA
6
5
4
2
|S21θ
|
3
2
3
2
1
0
NF
1
0
1
5
10
50 70
0
2
4
6
8
10
0.5
Collector Current, IC (mA)
Collector to Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R206-024,D
相关型号：
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
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