2SC3356_15 [WINNERJOIN]
TRANSISTOR (NPN);
| 型号： | 2SC3356_15 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
2SC3356
SOT-23-3L
2SC3356 TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM:
0.2
0.1
W (Tamb=25℃)
2. 80¡ À0. 05
1. 60¡ À0. 05
Collector current
ICM:
A
V
Collector-base voltage
V(BR)CBO 20
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=10µA, IE=0
Ic= 1mA, IB=0
MIN
20
12
3
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V
V
IE= 10µA, IC=0
VCB= 10 V, IE=0
1
1
µA
µA
IEBO
VEB= 1V , IC=0
hFE
VCE= 10V, IC= 20mA
50
6
300
VCE=10V, IC= 20mA
GHz
dB
Transition frequency
fT
NF
VCE=10V, IC= 7mA, f = 1GHz
2
Noise figure
CLASSIFICATION OF hFE
Marking
R23
Q
R24
R
R25
Rank
S
WEJ ELECTRONIC CO.,LTD
Range
50-100
80-160
125-250
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
相关型号：
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
RENESAS
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