2SC2655Y [UTC]
Transistor;UTC2SC2655
NPNEPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage
VCE(sat)= 0.5V (Max.)
*High speed switching time
tstg=1.0μs (Typ.)
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Ic
VALUE
UNIT
V
V
V
A
A
A
50
50
5
2
3
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pluse)
Base Current
Icp*
IB
0.5
Collector Power Dissipation
Junction Temperature
Storage Temperature
* PW≦16ms,Duty Cycle≦50%.
Pc
Tj
TSTG
900
150
-55 ~ +150
mW
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
V(BR)CEO
ICBO
TEST CONDITIONS
Ic= 10mA IB= 0
MIN TYP MAX UNIT
50
V
μA
μA
VCB=50V IE= 0
1.0
1.0
IEBO
VEB= 5V Ic=0
DC Current Gain
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=2V,Ic=0.5A
VCE=2V,Ic=1.5A
Ic=1A,IB=0.05A
70
40
240
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Transition Frequency
0.5
1.2
V
V
MHz
pF
Ic=1A,IB=0.05A
VCE=2V, Ic=0.5A
VCB= 10V, IE= 0, f=1MHz
100
30
Collector Output Capacitance
Cob
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-013,B
UTC2SC2655
NPNEPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
0.1
IB1
OUTPUT
Turn-on Time
ton
20μs
INPUT
IB2
IB1
μS
Switching Time
IB2
Vcc=30 V
IB1= -IB2=0.05A
DUTY CYCLE≦1%
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
70-140
120-240
ELECTRICAL CHARACTERISTICS CURVES
VCE-Ic
Ic-VCE
1
2.4
Common Emitter
25
20
Ta=25°C
12
10
8
6
0.8
2.0
18
15
IB=5mA
Common
1.6
1.2
0.8
0.6
0.4
20
Emitter
10
Ta=25°C
30
40
4
0.2
0
IB=2mA
0.4
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
14
8
10
12
Collector -Emitter Voltage VcE(V)
Collector Current Ic (A)
VCE-Ic
VCE-Ic
1
1
IB=5mA
Common EmitterTa= -55°C
0.8
0.8
0.6
0.4
0.6
0.4
IB=5mA
20
10
20
30
10
30
40
40
50
0.2
0
0.2
0
Common Emitter
Ta=100°C
0
0.4
0.8
1.2
0
0.4
0.8
1.2
1.6
2.4
1.6
2.4
2.0
2.0
Collector Current Ic (A)
Collector Current Ic (A)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-013,B
UTC2SC2655
NPNEPITAXIAL SILICON TRANSISTOR
hFE -Ic
VCE(sat) -Ic
1000
500
1
Common Emitter
Common Emitter
VCE=2V
Ic/IB=20
0.5
0.3
300
Ta=25°C
Ta=100°C
100
0.1
0.05
0.02
Ta=100°C
Ta=-55°C
50
30
Ta=25°C
Ta=-55°C
0.3
0.5
10
0.3
1
0.01
0.03
0.1
1
0.01
0.03 0.05 0.1
Collector Current Ic (A)
Collector Current Ic (A)
VBE(sat) -Ic
Ic-VBE
5
3
2.0
1.5
Common Emitter
VCE=2 V
Common Emitter
Ic/IB=20
Ta=-55°C
Ta=100°C
Ta=25°C
1
Ta=-55°C
1.0
0.5
0
0.5
0.3
Ta=25°C
Ta=100°C
0.1
0.3
1
0.01
0.03 0.05 0.1
0
0.4
0.8
1.2
1.6
2.0
Collector Current Ic (A)
Base -Emitter Voltage VBE(V)
Pc-Ta
Safe Operating Area
1000
800
5
3
Ic MAX.(PULSED)*
1ms*
10ms*
1
100ms*
600
0.5
0.3
400
200
0
1s*
DC Operation
Ta=25°C
0.1
Single Nonrepetitive Pulse
Ta=25°C
0
40
80
120
160
0.05
0.03
200 240
Curves Must Be Derated Linearly W ith
Increase In Temperature
Ambient Temperature Ta (°C)
VCEO MAX.
0.01
0.2
0.5
1
3
10 30
100
Collector-Emitter Voltage VCE(V)
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-013,B
UTC2SC2655
NPNEPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R211-013,B
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