2SC2656 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC2656 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2624
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base voltage
VALUE
450
400
40
7
UNIT
V
V
V
V
Collector Current-Continuous
Base Current-Continuous
5
A
IB
1.5
A
Collector Power Dissipation
@ TC=25℃
PC
80
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.17
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2624
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEO(SUS)
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
400
400
450
7
TYP. MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 10mA ; IB= 0
V
V
V
V
IC= 1A ; IB= 0
IC= 1mA ; IE= 0
IE= 0.1mA ; IC= 0
IC= 2A; IB= 0.4A
IC= 2A; IB= 0.4A
VCB= 450V ; IE=0
VEB= 7V; IC=0
1.2
1.5
1.0
0.1
V
V
VCE
VBE
(sat)
(sat)
ICBO
mA
mA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
IC= 5A; VCE= 5V
10
Switching times
Turn-on Time
1.0
2.0
1.0
μs
μs
μs
ton
tstg
tf
IC= 4A , IB1= -IB2= 0.8A
RL= 20Ω;PW=20μs
Duty Cycle≤2%
Storage Time
Fall Time
2
isc Website：www.iscsemi.cn
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