2SC2328AO [UTC]
Transistor;
| 型号： | 2SC2328AO |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor 放大器 功率放大器 |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SC2328A
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SA928A
1
TO-92NL
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
UNIT
V
V
V
W
30
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
30
5
1
2
Ic
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=100µA,IE=0
MIN TYP MAX UNIT
30
30
5
V
V
Ic=10mA,IB=0
IE=1mA,Ic=0
VCB=30V,IE=0
V
nA
nA
100
100
320
1
Emitter cut-off current
DC current gain(note)
Base-emitter on voltage
Collector-emitter saturation voltage
Output capacitace
IEBO
hFE
VBE(on)
VCE(sat)
Cob
VBE=5V,Ic=0
VCE=2V,Ic=500mA
VCE=2V,Ic=500mA
Ic=1.5A,IB=0.03A
VCB =10V, IE =0,f=1MHz
VCE=2V,Ic=500mA
100
V
V
2
30
120
pF
MHz
Current gain bandwidth product
fT
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
100-200
160-320
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-008,A
UTC 2SC2328A
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
FIG.1 STATIC CHARACTERISTIC
1400
FIG.2 BASE-EMITTER ON VLOTAGE
1400
1200
1000
800
600
400
200
0
I
B
=7mA
1200
1000
800
600
400
200
0
VCE=2V
I
B=6mA
I
I
B
=5mA
=4mA
B
I
I
I
B=3mA
B=2mA
B=1mA
0
2
4
6
8
10 12 14
16
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE(V),BASE-EMITTER VOLTAGE
VCE(V),COLLECTOR-EMITTER VOLTAGE
FIG.3 DC CURRENT GAIN
FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE
3
1000
1
500
300
0.5
0.3
Ic=50l
B
VCE=2V
Ta=25°C
100
0.1
50
30
0.05
0.03
10
0.01
3000
3000
1
3
10 30 100 300 1000
1
3
10 30 100 300 1000
Ic(mA),COLLECTOR CURRENT
Ic(mA),COLLECTOR CURRENT
FIG.5 POWER DERATING
FIG.6 SAFE OPERATING AREA
5
3
1.2
1.0
0.8
0.6
0.4
0.2
0
Ic(MAX) PULSE
Ic(MAX)
1ms
1
Ta=25°C
1s
D.C
OPERATION
0.5
0.3
0.1
0.05
0.03
V
CEO MAX
0.01
0
20 40 60 80 100 120 140 160
Ta(°C),AMBIENT TEMPERATURE
0.1 0.3 0.5
1
3
5
10 30 50 100
V
CE(V), COLLECTOR EMITTER VOLTAGE
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-008,A
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