2SC2331M [ISC]
Transistor;
| 型号： | 2SC2331M |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2331
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
100
100
7
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
2.0
A
ICM
Collector current-Peak
Base current
4.0
A
IB
1.0
A
Ta=25℃
TC=25℃
1.5
PT
Total power dissipation
W
15
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2331
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=1.0A ,IB=0.1A,L=1mH
IC=1A; IB=0.1A
MIN
TYP.
MAX
UNIT
V
100
0.6
1.5
10
V
IC=1A ;IB=0.1A
V
VCB=100V; IE=0
VEB=5V; IC=0
μA
μA
IEBO
10
hFE-1
DC current gain
IC=0.1A ; VCE=5V
IC=1A ; VCE=5V
40
40
hFE-2
DC current gain
200
Switching times resistive load
ton
Turn-on time
Storage time
Fall time
0.5
1.5
0.5
μs
μs
μs
IC=1.0A IB1=- IB2=0.1A
RL=50Ω;VCC≈50V
ts
tf
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2331
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
相关型号：
2SC2333
PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance)
NEC
2SC2333-AZ
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
2SC2333-K-AZ
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
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