2SC2333 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2333 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2333
DESCRIPTION
·
·With TO-220C package
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·Switching regulator
·DC-DC converter
·Ultrasonic appliance
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
500
Open base
400
V
Open collector
7
V
2
A
ICM
Collector current-peak
Base current
4
1
A
IB
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
15
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2333
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICER
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.5A;IB=0.1A;L=1mA
Collector-emitter saturation voltage IC=0.5A; IB=0.1A
400
1.0
1.2
1.0
10
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=0.5A; IB=0.1A
V
VCE=400V;RBE=51Ω;
Ta=125℃
mA
μA
mA
μA
μA
ICEX1
ICEX2
ICBO
VCE=400V;VBE(OFF)=-5.0V
VCE=400V;VBE(OFF)=-5.0V
1.0
10
Ta=125℃
VCB=400V ;IE=0
VEB=5V; IC=0
IEBO
10
hFE-1
hFE-2
ton
IC=0.1A ; VCE=5V
IC=0.5A ; VCE=5V
20
10
80
DC current gain
Turn on time
1.0
2.5
1.0
μs
μs
μs
IC=0.5A;IB1=-IB2=0.1A
tstg
Storage time
RL=300Ω;VCC=150V
tf
Fall time
hFE-1 classifications
M
L
K
20-40
30-60
40-80
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2333
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2333
4
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