2SB857-X-TA3-T [UTC]
SILICON PNP TRANSISTOR; 硅PNP晶体管
| 型号： | 2SB857-X-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | SILICON PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB857
PNP SILICON TRANSISTOR
SILICON PNP TRANSISTOR
DESCRIPTION
Low frequency power amplifier.
Lead-free:
2SB857L
Halogen-free:2SB857G
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
E
B
B
2
C
C
C
3
B
E
E
2SB857-x-T6C-K
2SB857-x-TA3-T
2SB857-x-TN3-R
2SB857L-x-T6C-K
2SB857L-x-TA3-T
2SB857L-x-TN3-R
2SB857G-x-T6C-K
2SB857G-x-TA3-T
2SB857G-x-TN3-R
TO-126C
TO-220
TO-252
Bulk
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R217-006.E
2SB857
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-130
-100
-5
VCEO
V
VEBO
V
IC
-4
A
Collector Current (IC Peak)
IC(PEAK)
-8
A
TO-126C
TO-220
TO-252
10
W
W
W
°C
°C
Total Power Dissipation (TC=25°C)
PD
40
20
Junction Temperature
Storage Temperature
TJ
+150
-50~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS
MIN
-130
-100
-5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
BVCBO IC=-10μA, IE=0
BVCEO IC=-50mA, IB=0
V
BVEBO IE=-10μA, IC=0
V
VCE(SAT) IC=-2A, IB=-0.2A (Note)
VBE(ON) VCE=-4V, IC=-1A (Note)
-1
-1
-1
V
V
μA
ICBO
hFE1
hFE2
fT
VCB=-130V, IC=0
VCE=-4V, IC=-0.1A (Note)
VCE=-4V, IC=-1A (Note)
VCE=-4V, IC=-500mA, f=100MHz
35
60
DC Current Gain
320
Transition Frequency
15
MHz
Note: Pulse Test: Pulse Width≤380μS, Duty Cycle≤2%.
CLASSIFICATION OF hFE2
CLASSIFICATION
RANGE
B
C
D
60 ~ 120
100 ~ 200
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R217-006.E
www.unisonic.com.tw
2SB857
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R217-006.E
www.unisonic.com.tw
2SB857
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R217-006.E
www.unisonic.com.tw
相关型号：
2SB857G-B-T6C-K
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-126C, 3 PIN
UTC
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