2SB857C
更新时间：2024-09-18 02:45:05
品牌：ETC
描述：TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
概述
数据手册2SB857C 概述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
晶体管| BJT | PNP | 50V V（ BR ） CEO | 4A I（C ） | TO- 220AB
2SB857C 数据手册
通过下载2SB857C数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SB857, 2SB858
Silicon PNP Triple Diffused
ADE-208-859 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
VCBO
VCEO
VEBO
IC
2SB857
2SB858
–70
–60
–5
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–70
–50
V
–5
V
–4
–4
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
IC(peak)
PC*1
Tj
–8
–8
A
40
40
W
°C
150
150
Tstg
–45 to +150
–45 to +150
°C
2SB857, 2SB858
Electrical Characteristics (Ta = 25°C)
2SB857
2SB858
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
–70
–50
–5
—
—
—
—
—
—
–70
–60
–5
—
—
—
—
—
—
V
IC = –10 µA, IE = 0
IC = –50 mA, RBE = ∞
IE = –10 µA, IC = 0
VCB = –50 V, IE = 0
Collector to emitter
breakdown voltage
V
Emitter to base
breakdown voltage
V
Collector cutoff current ICBO
DC current transfer ratio hFE1
hFE2
—
60
35
—
—
—
—
—
–1
320
—
—
60
35
—
—
—
—
—
–1
320
—
µA
1
*
VCE
=
IC = –1 A*2
–4 V
IC = –0.1 A*2
Collector to emitter
saturation voltage
VCE(sat)
–1
–1
V
V
IC = –2 A, IB = –0.2 A*2
Base to emitter voltage VBE
Gain bandwidth product fT
—
—
—
–1
—
—
—
—
–1
—
VCE = –4 V, IC = –1 A*2
15
15
MHz VCE = –4 V,
IC = –0.5 A*2
Notes: 1. The 2SB857 and 2SB858 are grouped by hFE1 as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200 160 to 320
Maximum Collector Dissipation Curve
Area of Safe Operation
(–10 V, –4 A)
60
40
20
–5
IC max (Continuous)
–2
–1.0
–0.5
T
C = 25°C
(–20 V, –2 A)
(–50 V, –0.24 A)
–0.2
–0.1
2SB857
2SB858
–0.05
–1
–2
–5 –10 –20
–50 –100
0
50
100
150
Collector to emitter Voltage VCE (V)
Case Temperature TC (°C)
2
2SB857, 2SB858
Typical Output Characteristics
TC = 25°C
Typical Transfer Characteristics
–5
–4
–3
–2
–1
0
–5
VCE = –4 V
–2
–1.0
–0.5
–0.2
–0.1
–0.05
–10 mA
IB = 0
–0.02
–0.01
–2
–4
–6
–8
–10
0
–0.2–0.4–0.6–0.8–1.0–1.2–1.4
Collector to emitter Voltage VCE (V)
Base to emitter voltage VBE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio vs.
Collector Current
–1.4
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
0
1,000
500
IC = 10 IB
VCE = –4 V
TC = 75°C
25
–25
TC = 75°C
25
200
100
50
–25
20
10
5
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2
–5
–0.01–0.02 –0.05–0.1 –0.2 –0.5 –1.0 –2 –4
Collector current IC (A)
Collector current IC (A)
3
2SB857, 2SB858
Package Dimensions
Unit: mm
11.5 MAX
10.16 ± 0.2
4.44 ± 0.2
9.5
8.0
+0.1
-0.08
1.26 ± 0.15
φ 3.6
2.7 MAX
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
0.5 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
EIAJ
TO-220AB
Conforms
Conforms
1.8 g
Mass (reference value)
4
2SB857, 2SB858
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5
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