2SB772SL-X-T92-K [UTC]
MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
| 型号： | 2SB772SL-X-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 文件： | 总3页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB772S
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882S
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
E
E
E
2
3
E
E
B
B
B
2SB772SL-x-AA3-R
2SB772SL-x-AB3-R
2SB772SL-x-T92-B
2SB772SL-x-T92-K
2SB772SL-x-T92-R
2SB772SG-x-AA3-R
2SB772SG-x-AB3-R
2SB772SG-x-T92-B
2SB772SG-x-T92-K
2SB772SG-x-T92-R
SOT-223
SOT-89
TO-92
C
C
C
C
C
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92
TO-92
Tape Reel
www.unisonic.com.tw
1 of 3
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R208-002.F
2SB772S
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICP
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
DC Collector Current
Base Current
-40
-30
V
-5
V
-7
-3
A
IC
A
IB
-0.6
A
SOT-89
SOT-223
TO-92
0.5
W
W
W
°C
°C
Power Dissipation
PD
1
0.5
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-40
-30
-5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC=-100μA, IE=0
BVCEO IC=-1mA, IB=0
BVEBO IE=-100μA, IC=0
V
V
ICBO
ICEO
IEBO
hFE1
hFE2
VCB=-30V, IE=0
VCE=-30V, IB=0
VEB=-3V, IC=0
-1000
-1000
-1000
nA
nA
nA
Collector Cut-Off Current
Emitter Cut-Off Current
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
30
200
150
-0.3
-1.0
80
DC Current Gain(Note 1)
100
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=-2A, IB=-0.2A
VBE(SAT) IC=-2A, IB=-0.2A
V
V
fT
VCE=-5V, IC=-0.1A
MHz
pF
COB
VCB=-10V, IE=0, f=1MHz
45
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R208-002.F
www.unisonic.com.tw
2SB772S
PNP SILICON TRANSISTOR
■
TYPICAL CHARACTERICS
Collector-Emitter Saturation Voltage
vs. Collector Current
DC Current Gain vs. Collector Current
-103
-102
800
600
VCE=-2V
IC/IB=10
150°C
150°C
400
200
0
25°C
-101
-1
25°C
-10-1
-104
-10-1
-100
-100
-101
-103
-102
-101
-103
-102
-104
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Base-Emitter Saturation Voltage vs.
Collector Current
Collector Current vs.
Collector-Emitter Voltage
2.0
1.6
1.2
0.8
0.4
0
-1.2
-0.8
-0.4
0
IC/IB=10
25°C
150°C
-10-1
-100
-101
-102
-103
-104
0
1
2
4
5
3
Collector Current, Ic (mA)
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R208-002.F
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明