2SB772SQL-AA3-R [UTC]
Transistor;
| 型号： | 2SB772SQL-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
ꢀ
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
1
ꢀ FEATURES
SOT-223
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S
*Pb-free plating product number: 2SB772SL
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
Emitter
1
2
3
Collector
Base
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tape Reel
Normal
Lead free
2SB772S-AA3-R 2SB772SL-AA3-R SOT-223
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R207-012,A
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Peak Collector Current
DC Collector Current
Base Current
SYMBOL
VCBO
VCEO
VEBO
ICM
RATINGS
UNIT
V
-40
-30
V
-5
V
-7
A
IC
-3
A
IB
-0.6
A
Power Dissipation
PD
0.5
W
℃
℃
Operating Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
ICBO
TEST CONDITIONS
VCB=-30V,IE=0
VEB=-3V,Ic=0
CE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
MIN
TYP
MAX
-1000
-1000
UNIT
nA
IEBO
nA
hFE1
hFE2
V
30
100
200
150
-0.3
-1.0
80
DC Current Gain(Note 1)
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat) Ic=-2A,IB=-0.2A
VBE(sat) Ic=-2A,IB=-0.2A
V
V
fT
VCE=-5V,Ic=-0.1A
MHz
pF
Cob
VCB=-10V,IE=0,f=1MHz
45
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R207-012,A
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
■
TYPICAL CHARACTERICS
Fig.2 Derating curve of safe
operating areas
Fig.1 Static characteristics
150
1.6
-IB=9mA
B -I
=7mA
B
-I =8mA
100
1.2
0.8
-IB=6mA
-I =5mA
B
D
i
s
s
i
p
a
-I
B
=4mA
=3mA
=2mA
=1mA
t
i
50
o
n
-I
-I
-I
B
l
i
m
0.4
0
i
t
e
B
d
B
0
0
4
8
12
16
20
-50
0
50
100
150
200
-Collector-Emitter voltage (V)
Fig.3 Power Derating
Case Temperature, Tc (℃)
Fig.4 Collector Output
capacitance
3
10
12
IE=0
f=1MHz
2
10
8
1
10
4
0
0
10
0
-1
10
-2
10
-3
10
-50
0
50
100
150
200
10
Case Temperature, Tc (
℃)
-Collector-Base Voltage(v)
Fig.5 Current gain-
bandwidth product
Fig.6 Safe Operating Area
3
1
0
Ic(max),Pulse
Ic(max),DC
10
10
10
1
0
1
m
m
S
S
VCE=5V
2
10
IB=8mA
1
-1
10
10
0
-2
10
10
-2
-1
10
0
1
0
1
2
10
10
10
10
10
10
Collector-Emitter Voltage
Collector current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R207-012,A
2SB772S
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS(cont.)
Fig.7 DC current gain
Fig.8 Saturation Voltage
3
4
10
10
VCE=-2V
VBE(sat)
3
10
2
10
2
10
VCE(sat)
1
10
1
10
0
0
10
10
0
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
10
-Collector current, Ic (mA)
-Collector current, Ic (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R207-012,A
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