2SB766AL-R-AB3-R [UTC]
Small Signal Bipolar Transistor;
| 型号： | 2SB766AL-R-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor |
| 文件： | 总3页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB766A
PNP SILICON TRANSISTOR
LOW FREQUENCY OUTPUT
AMPLIFICATION
FEATURES
* Large collector power dissipation Pc.
* Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the
magazine packing.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-89
Lead Free
Halogen Free
1
2
3
2SB766AL-x-AB3-R
2SB766AG-x-AB3-R
B
C
E
Tape Reel
www.unisonic.com.tw
1 of 3
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R204-028.B
2SB766A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25°C )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
-50
V
-5
V
Collector Current
-1
-1.5
A
Peak Collector Current
Collector Power Dissipation (Note 2)
Junction Temperature
Storage Temperature
ICP
A
PC
1
W
°C
°C
TJ
150
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Printed circuit board :Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector
portion
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICBO
TEST CONDITIONS
IC= -10μA ,IE=0
MIN TYP MAX UNIT
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
-60
-50
-5
V
V
IC= -2mA ,IB= 0
IE= -10μA, IC=0
V
Collector Cut-Off Current
VCB= -20V,IE=0
-0.1
340
μA
hFE1
VCE= -10V,IC= -500mA (Note)
VCE= -5V,IC= -1A (Note)
IC = -500mA,IB =-50mA (Note)
IC = -500mA,IB =-50mA (Note)
VCB= -10V, IE= 50mA, f=200MHz
VCB= -10V, IE= 0, f=1MHz
85
50
DC Current Transfer Ratio
hFE2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
VCE(SAT)
VBE(SAT)
fT
-0.2
-0.4
V
V
-0.85 -1.2
200
MHz
pF
Output Capacitance
COB
20
30
Note: Pulse measurement
CLASSIFICATION OF hFE1
RANK
Q
R
S
RANGE
85-170
120-240
170-340
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R208-028,B
www.unisonic.com.tw
2SB766A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R208-028,B
www.unisonic.com.tw
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