2SB766AQ [PANASONIC]
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN;
| 型号： | 2SB766AQ |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件： | 总3页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0766, 2SB0766A (2SB766, 2SB766A)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
4.5 0.1
1.6 0.2
Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A)
1.5 0.1
■ Features
• Large collector power dissipation PC
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
3
1
0.4 0.08
1.5 0.1
0.4 0.04
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
2SB0766
2SB0766A
2SB0766
2SB0766A
VCBO
−
V
Collector-base voltage
(Emitter open)
45˚
3.0 0.15
VCEO
5
V
Collector-emitter voltage
(Base open)
1: Base
2: Collector
3: Emitter
−50
Emitter-base voltage (Collector VEB
−5
V
A
MiniP3-F1 Package
Collector current
IC
ICP
PC
Tj
Peak collector current
Collector power disipaon *
Junction temperure
Storage tempature
−1.5
1
A
Marking Symbol:
• 2SB0766: A
• 2SB0766A: B
W
°C
°C
150
−55 to +150
Note) : Pricircuiboard: Copper foil m2 or more, and the board thickness of 1.7 mm for the collector portion.
ElecCharacterisics Ta = 25°C 3°C
Parameter
Symbol
Conditions
IC = −10 µA, IE = 0
Min
−30
−60
−25
−50
−5
Typ
Max
Unit
2S0766
2SB0766A
2SB0766
2SB0766A
VCBO
V
ollector-base voltag
(mitter n)
VCEO
IC = −2 mA, IB 0
V
Cooltag
(Bas
Emitter-age (Collector open)
Collector-base cutoff current (itter open)
VEBO
ICBO
IE = −10 µA, IC = 0
V
µA
VCB = −20 V, IE = 0
− 0.1
1
2
Forward current transfer ratio *
hFE1
hFE2
VCE = −10 V, IC = −500 mA
VCE = −5 V, IC = −1 A
85
50
340
*
1
Collector-emitter saturation voltage *
VCE(sat) IC = −500 mA, IB = −50 mA
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
− 0.85 −1.20
200
V
V
1
Base-emitter saturation voltage *
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Co
20
30
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJC00051DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0766, 2SB0766A
PC Ta
IC VCE
VCE(sat) IC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−1.50
−1.25
−1.00
− 0.75
− 0.50
− 0.25
0
−100
−10
IC / IB = 10
Ta = 25°C
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
IB = −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−1
Ta = 75°C
25°C
−4 mA
−3 mA
−2 mA
−25°C
− 0.1
−1 mA
− 0.01
0
20 40 60 80 100 120 140 160
0
−2
−4
−6
−8
−10
− 0.01
− 0.1
−1
−10
(
)
Ambient temperature Ta °C
( )
V
(
)
A
Collector-emitter voltage VCE
Collector current IC
VBE(sat) IC
hFE IC
fT IE
600
500
400
300
200
100
0
−100
−10
200
160
120
80
VCB = −10 V
Ta = 25°C
IC / IB = 10
VCE = −10 V
25°C
Ta = 75°C
Ta = −25°C
75°C
−1
25°C
−25°C
− 0.1
40
− 0.01
0
− 0.01
− 0.1
−1
−10
− 0.01
− 0.1
−1
−10
1
10
)
Emitter current IE mA
100
(
)
A
(
)
A
(
Collector current IC
Collector current IC
Cob VCB
Safe operation area
50
40
30
20
10
−10
Single pulse
Ta = 25°C
IE = 0
f = 1 MHz
Ta = 25°C
ICP
IC
−1
− 0.1
− 0.01
− 0.001
t = 10 ms
t = 1 s
0
−1
−10
−100
− 0.1
−1
−10
−100
(
)
V
(
)
Collector-base voltage VCB
Collector-emitter voltage VCE
V
SJC00051DED
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
相关型号：
2SB766AR
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN
PANASONIC
2SB766AS
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN
PANASONIC
2SB766Q
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN
PANASONIC
2SB766S
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明