2SB1151L-O-T60-K [UTC]
Power Bipolar Transistor;
| 型号： | 2SB1151L-O-T60-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor 局域网 晶体管 |
| 文件： | 总4页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1151
PNP SILICON TRANSISTOR
LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT
FEATURES
*High Power Dissipation
*Complementary to 2SD1691
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
E
B
2
C
C
C
3
B
B
E
2SB1151L-x-AA3-T
2SB1151L-x-T60-K
2SB1151L-x-TN3-R
2SB1151G-x-AA3-T
2SB1151G-x-T60-K
2SB1151G-x-TN3-R
SOT-223
TO-126
TO-252
Tape Reel
Bulk
Tape Reel
(1) K: Bulk, R: Tape Reel
2SB1511L-x-AA3-R
(1)Packing Type
(2)Package Type
(3)Rank
(2) AA3: SOT-223, T60: TO-126, TN3: TO-252
(3) x: refer to Classification of hFE2
(4) G: Halogen Free, L: Lead Free
(4)Lead Plating
www.unisonic.com.tw
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R204-022.C
2SB1151
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
-60
V
-7
V
DC
-5
A
Collector Current
Base Current
Pulse(Note 2)
ICP
-8
A
IB
-1
A
SOT-223
TO-126
TO-252
1
1.5
W
W
W
°C
°C
PD
Power Dissipation (Ta=25°C)
2
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.PW≤10ms, Duty Cycle≤50%
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Voltage
BVCBO IC=-100uA, IE=0
BVCEO IC=-1mA, IB=0
BVEBO IE=-100uA, Ic=0
-60
-60
-7
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
VCB=-50V, IE=0
VEB=-7V, IC=0
-10
-10
µA
µA
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT) IC=-2A, IB=-0.2A
VBE(SAT) IC=-2A, IB=-0.2A
-0.14 -0.3
-.0.9 -1.2
V
hFE 1
hFE 2
hFE 3
VCE=-1V, IC=-0.1A
VCE=-1V, IC=-2A
VCE=-2V, IC=-5A
60
160
50
DC Current Gain
400
Turn On Time
tON
0.15
1
µS
Switching Time
Storage Time
tSTG
tF
0.78 2.5
0.18
µS
µS
Fall Time
1
Pulse test : PW≤350 µS, Duty Cycle≤2% Pulse
CLASSIFICATION OF hFE2
RANK
O
Y
RANGE
160 ~ 320
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R204-022.C
www.unisonic.com.tw
2SB1151
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R204-022.C
www.unisonic.com.tw
2SB1151
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R204-022.C
www.unisonic.com.tw
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