首页 |元器件品牌

2SB1151L-T60-T [UTC]

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT; 低集电极饱和电压大电流
2SB1151L-T60-T
型号： 2SB1151L-T60-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
低集电极饱和电压大电流
文件： 总4页 (文件大小：114K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
2SB1151  
PNP EPITAXIAL SILICON TRANSISTOR  
LOW COLLECTOR  
SATURATION VOLTAGE  
LARGE CURRENT  
ꢀ
FEATURES  
*High Power Dissipation : PD=1.5W(Ta=25℃)  
1
*Complementary to 2SD1691.  
TO - 126  
*Pb-free plating product number: 2SB1151L  
ꢀ PIN CONFIGURATION  
PIN NO.  
PIN NAME  
Emitter  
1
2
3
Collector  
Base  
ꢀ ORDERING INFORMATION  
Order Number  
Package  
TO-126  
Packing  
Tube  
Normal  
Lead free  
2SB1151-T60-T 2SB1151L-T60-T  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., LTD  
1
QW-R204-022,A  
2SB1151  
PNP EPITAXIAL SILICON TRANSISTOR  
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25 )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
V
V
-60  
-7  
DC  
-5  
-8  
Collector Current  
Base Current  
A
A
Pulse(Note 3)  
ICP  
IB  
-1  
Ta=25℃  
Tc=25℃  
1.5  
Power Dissipation  
PD  
W
20  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
125  
TOPR  
TSTG  
0 ~ +70  
-40 ~ +150  
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range  
and assured by design from -40℃~ 85℃.  
3.PW ≤10ms, Duty Cycle ≤50%  
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=-50V, IE=0  
VEB=-7V, IC=0  
MIN TYP MAX UNIT  
Collector Cut-off Current  
-10  
-10  
µA  
µA  
V
Emitter Cut-off Current  
IEBO  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(sat) IC=-2A, IB=-0.2A  
VBE(sat) IC=-2A, IB=-0.2A  
-0.14 -0.3  
-.0.9 -1.2  
V
hFE 1  
hFE 2  
hFE 3  
VCE=-1V, IC=-0.1A  
VCE=-1V, IC=-2A  
VCE=-2V, IC=-5A  
60  
160  
50  
DC Current Gain  
400  
OUTPUT  
Turn On Time  
tON  
0.15  
1
IB2  
INPUT  
IB1  
IB2  
0
IB1  
5Ω  
Switching Time  
Storage Time  
µS  
tSTG  
tF  
0.78 2.5  
0.18  
20µsec  
-IB1=IB2=0.2A  
VCC=-10V  
DUTY CYCLE≤ 1%  
Fall Time  
1
Pulse test : PW ≤350 µS, Duty Cycle ≤2% Pulse  
ꢀ
CLASSIFICATION OF hFE2  
RANK  
O
Y
RANGE  
160 ~ 320  
200 ~ 400  
UNISONIC TECHNOLOGIES CO., LTD  
2
www.unisonic.com.tw  
QW-R204-022,A  
2SB1151  
PNP EPITAXIAL SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS  
PD - Ta  
dT - TC  
160  
25  
20  
TC =Ta  
INFINTE HEAT SINK  
140  
120  
100  
80  
15  
10  
5
60  
40  
20  
0
0
0
25 50 75 100 125 150 175 200  
Case Temperature, T (  
0
50  
100  
150  
200  
250  
AmbientTemperature, T (  
)
℃
)
℃
C
a
Reverse Bias Safe Operating Area  
Safe Oerating Area  
-10  
-10  
IC (Pulse)MAX.  
-5  
-3  
IC (DC)MAX.  
-8  
-6  
-1  
VCEO (SUS)  
-4  
-2  
-0.5  
-0.3  
* SINGLE NONREPETIVE  
℃
PULSED T a=25  
CURVES MUST BE DERATED  
LINERLY WITH INCREASE  
IN TEMPERATURE  
-0.1  
0
-20  
-40  
-60  
-80  
-100  
-1  
-3 -5 -10  
-30 -50 -100  
Collector-Emitter Voltage, VCE  
V
Collector-Emitter Voltage, VCE  
V
hFE - IC  
IC - VCE  
1K  
-10  
500  
300  
VCE=-2V  
-8  
-6  
IB=-60mA  
100  
50  
30  
IB=-40mA  
IB=-30mA  
IB=-20mA  
VCE=-1V  
-4  
-2  
10  
5
3
IB=-10mA  
IB=0mA  
-1.6  
1
-0.01 -0.03 -0.1 -0.3  
-1  
-3  
-10  
0
-0.4  
-0.8  
-1.2  
-2.0  
Collector-Emitter Voltage, VCE  
V
CollectorCurrent, IC (A)  
UNISONIC TECHNOLOGIES CO., LTD  
3
www.unisonic.com.tw  
QW-R204-022,A  
2SB1151  
PNP EPITAXIAL SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS  
VBE(Sat) , VCE(Sat) - IC  
-10  
IC/IB=10  
-5  
-3  
VBE(sat)  
-1  
-0.5  
-0.2  
-0.1  
-0.05  
-0.03  
VCE(sat)  
-0.01  
-0.03 -0.1  
-0.3  
-1  
-3  
-10  
CollectorCurrent, IC (A)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4
www.unisonic.com.tw  
QW-R204-022,A  

相关型号：

2SB1151L-X-AA3-R

 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
UTC

2SB1151L-X-T60-K

 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
UTC

2SB1151L-X-TN3-R

 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
UTC

2SB1151L-Y-AA3-T

 Power Bipolar Transistor
UTC

2SB1151L-Y-T60-K

 Power Bipolar Transistor
UTC

2SB1151L-Y-T60-R

 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3
UTC

2SB1151L-Y-TN3-R

 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE PACKAGE-3
UTC

2SB1151M

 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126
NEC

2SB1151_10

 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
UTC

2SB1151_15

 Silicon PNP Power Transistors
JMNIC

2SB1151_2014

 Silicon PNP Power Transistors
JMNIC

2SB1154

 Silicon PNP epitaxial planar type(For power switching)
PANASONIC
©2020 ICPDF网 联系我们和版权申明