2SA2016L-AB3-R [UTC]
PNP EPITAXIAL PLANAR TRANSISTOR; PNP外延平面晶体管
| 型号： | 2SA2016L-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA2016
PNP PLANAR TRANSISTOR
PNP EPITAXIAL PLANAR
TRANSISTOR
1
ꢀ
APPLICATIONS
* Relay drivers, lamp drivers, motor drivers, strobes.
ꢀ
FEATURES
SOT-89
*High current capacitance.
*Low collector-to-emitter saturation voltage.
*High-speed switching
*High allowable power dissipation.
*Pb-free plating product number: 2SA2016L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
SOT-89
Normal
Lead Free Plating
1
2
3
2SA2016-AB3-R
2SA2016L-AB3-R
B
C
E
Tape Reel
2SA2016L-AB3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AB3: SOT-89
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R208-018.B
2SA2016
PNP PLANAR TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25°С)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
-50
-6
V
V
V
VCEO
VEBO
Collector Dissipation Mounted on a ceramic board
(250mm2*0.8mm)
Pc
1.3
W
Collector Dissipation (Tc=25
°
C)
Pc
Ic
3.5
-7
W
A
Collector Current
Collector Current
Icp
IB
-10
A
Base Current
-1.2
A
Junction Temperature
Storage Temperature
TJ
150
°
°
C
C
TSTG
-55 to +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Tc=25
℃)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-to-Base Breakdown Voltage
Collector-to- Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Ic= -10µA, IE=0
-50
-50
-6
V
V
Ic= -1mA, RBE=∞
Ic=0, IE= -10µA
V
VCB= -40V, IE=0
-0.1
µA
µA
Emitter Cut-Off Current
IEBO
VEB= -4V, Ic=0
-0.1
560
DC Current Gain
hFE
VCE= -2V, Ic= -500mA
Ic= -3.5A, IB= -175mA
Ic= -2A, IB= -40mA
Ic= -2A, IB= -40mA
VCE= -10V, Ic= -500mA
VCB= -10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
200
-0.23 -0.39
-0.24 -0.40
-0.83 -1.2
290
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Turn-on Time
VBE(SAT)
fT
V
MHz
pF
ns
ns
ns
Cob
tON
50
40
Storage Time
tSTG
tF
225
Fall Time
25
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2SA2016
PNP PLANAR TRANSISTOR
ꢀ
SWITCHING TIME TEST CIRCUIT
PW=20μs
D.C.≒1%
IB2
IB1
OUTPUT
INPUT
R
B
R
L
VR
50Ω
+
+
100μF
470μF
VBE=5V
VCC= -25V
-20IB1=20IB2=IC= 2.5A
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PNP PLANAR TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
VBE(SAT)-Ic
VCE(SAT)-Ic
-10000
-10000
IC/IB=50
7
5
IC/IB=50
7
5
3
2
Ta =75℃
Ta =25℃
3
2
-1000
7
5
3
2
Ta =-25℃ Ta =25℃
Ta =75℃
-1000
7
5
Ta =-25℃
-100
7
5
3
2
3
2
-10
-0.01
-100
-0.01
2
3
5
7 -1.0
2 3 5 7 -10
2
3
5
7 -1.0
2 3 5 7 -10
2
3 5 7-0.1
2
3 5 7-0.1
Collector Current,Ic -A
Collector Current,Ic -A
Cob-VCB
fT -Ic
1000
5
3
VCE= -10V
f=1MHz
7
5
2
3
2
100
7
5
3
2
100
7
5
10
7
3
2
5
3
2
10
5 7
-1.0 2 3 5 7 -10
5 7-0.01 2 3 5 7-0.1
2 3
5 7-0.01
2 3 5 7-0.1
2 3 5 7-1.0
2
3 5
Collector Current,Ic -A
Collector-to-Base Voltage,VCB-V
Pc -Ta
ASO
2
2.0
Icp = -10A
-10
7
5
3
2
1
1
0
m
0
μ
s
IC= -7A
s
50
μ
s
1.5
1.3
D
C
M
o
O
u
p
n
t
-1.0
7
5
e
e
d
r
a
o
n
t
i
o
n
a
c
e
r
1.0
a
m
i
c
3
b
o
a
2
-0.1
7
5
r
d
100ms
10ms
(
2
5
0
m
m
2
*
0
0.5
0
.
8
m
m
)
3
2
Tc = 25℃
5 7-1.0
Collector-to-Emitter Voltage,VCE-V
-0.01
2
3
5
7 -10
2
3
5
7 -100
-0.1
2
3
0
20
40
60
80
100
120 140
160
Ambient Temperature, Ta -℃
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PNP PLANAR TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Ic-VCE
Ic-VBE
-8
-7
-7
-50mA
-60mA
-70mA
-80mA
VCE= -2V
-6
-6
-5
-5
-90mA
-40mA
-30mA
-4 -100mA
-4
-3
-2
-3
-2
-1
-20mA
-10mA
Ta =25℃
Ta =-25℃
-0.8 -1.0 -1.2 -1.4
Base-to-Emitter Voltage,VBE-V
Ta =75℃
-1
0
IB
=0
-2.0
0
0
-0.4
-0.8
-1.2
-1.6
0
-0.2 -0.4
-0.6
Collector -to-Emitter Voltage,VCE-V
hFE -Ic
VCE(SAT)-Ic
-1000
1000
VCE= -2V
7
5
IC/IB=20
7
5
3
2
Ta =75℃
3
2
-100
7
5
3
2
Ta =75℃
Ta =25℃
Ta =-25℃
Ta =25℃
100
7
5
Ta =-25℃
-10
7
5
3
2
3
2
10
-0.01
-1.0
-0.01
2
3
5 7 -1.0
2
3
5 7 -10
2
3
5
7 -1.0
2 3 5 7 -10
2
3
5 7-0.1
2 3 5 7-0.1
Collector Current,Ic -A
Collector Current,Ic -A
Pc -Tc
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20 40
60
80 100 120 140 160
Tc-℃
Case Temperature,
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2SA2016
PNP PLANAR TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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