2SA2016L-TN3-T [UTC]

Power Bipolar Transistor;
2SA2016L-TN3-T
型号: 2SA2016L-TN3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Bipolar Transistor

文件: 总6页 (文件大小:223K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SA2016  
PNP PLANAR TRANSISTOR  
PNP EPITAXIAL PLANAR  
TRANSISTOR  
„
APPLICATIONS  
* Relay drivers, lamp drivers, motor drivers, strobes.  
„
FEATURES  
*High current capacitance.  
*Low collector-to-emitter saturation voltage.  
*High-speed switching  
*High allowable power dissipation.  
„
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
B
B
2
C
C
C
3
E
E
E
2SA2016L-AB3-R  
2SA2016L-TN3-R  
2SA2016L-TN3-T  
2SA2016G-AB3-R  
2SA2016G-TN3-R  
2SA2016G-TN3-T  
SOT-89  
TO-252  
TO-252  
Tape Reel  
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R208-018.C  
2SA2016  
PNP PLANAR TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
-50  
-6  
V
V
V
VCEO  
VEBO  
Collector Dissipation Mounted on a  
ceramic board (250mm2*0.8mm)  
Collector Dissipation (TC=25°C)  
Collector Current  
Pc  
1.3  
W
Pc  
Ic  
3.5  
-7  
W
A
Collector Current  
Icp  
IB  
-10  
A
Base Current  
-1.2  
A
Junction Temperature  
Storage Temperature  
TJ  
150  
°C  
°C  
TSTG  
-55 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
250  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
35.7  
„
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-to-Base Breakdown Voltage  
Collector-to- Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO Ic= -10µA, IE=0  
BVCEO Ic= -1mA, RBE=∞  
BVEBO Ic=0, IE= -10µA  
-50  
-50  
-6  
V
V
V
ICBO  
IEBO  
hFE  
VCB= -40V, IE=0  
-0.1 µA  
-0.1 µA  
560  
Emitter Cut-Off Current  
VEB= -4V, Ic=0  
DC Current Gain  
VCE= -2V, Ic= -500mA  
Ic= -3.5A, IB= -175mA  
Ic= -2A, IB= -40mA  
200  
-0.23 -0.39  
V
V
Collector-Emitter Saturation Voltage  
VCE(SAT)  
-0.24 -0.40  
Base-Emitter Saturation Voltage  
Gain Bandwidth Product  
Output Capacitance  
Turn-on Time  
VBE(SAT) Ic= -2A, IB= -40mA  
-0.83 -1.2  
V
fT  
Cob  
tON  
tSTG  
tF  
VCE= -10V, Ic= -500mA  
VCB= -10V, f=1MHz  
290  
50  
MHz  
pF  
ns  
ns  
ns  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
40  
Storage Time  
225  
25  
Fall Time  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R208-018.C  
www.unisonic.com.tw  
2SA2016  
PNP PLANAR TRANSISTOR  
„
SWITCHING TIME TEST CIRCUIT  
PW=20μs  
D.C. 1%  
IB2  
IB1  
OUTPUT  
RL  
INPUT  
RB  
+
VR  
50Ω  
+
100μF  
VBE=5V  
-20IB1=20IB2=IC= 2.5A  
470μF  
VCC= -25V  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R208-018.C  
www.unisonic.com.tw  
2SA2016  
PNP PLANAR TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
VBE(SAT)-Ic  
VCE(SAT)-Ic  
-10000  
-10000  
IC/IB=50  
7
5
IC/IB=50  
7
5
3
2
TA =75°C  
TA =25°C  
3
2
-1000  
7
5
3
2
TA =-25°C  
TA =25°C  
-1000  
7
5
TA =-25°C  
-100  
7
5
TA =75°C  
3
2
3
2
-100  
-0.01  
-10  
-0.01  
2
3
5
7 -1.0  
2 3 5 7 -10  
2
3
5
7 -1.0  
2
3 5 7 -10  
2
3 5 7-0.1  
2
3 5 7-0.1  
Collector Current,Ic -A  
Collector Current,Ic -A  
Cob-VCB  
fT -Ic  
1000  
5
3
VCE= -10V  
f=1MHz  
7
5
2
3
2
100  
7
5
3
2
100  
7
5
10  
7
3
2
5
3
2
10  
5
5 7  
-1.0 2 3 5 7 -10  
7-0.01  
2
3
5
7-0.1  
2 3  
5 7  
5
7-0.01  
2
3
5 7-0.1  
2
3
-1.0  
2 3 5  
Collector Current,Ic -A  
Collector-to-Base Voltage,VCB-V  
Pc -TA  
ASO  
2
2.0  
Icp = -10A  
IC= -7A  
-10  
7
5
3
2
1.5  
1.3  
-1.0  
7
5
3
1.0  
2
-0.1  
7
5
100ms  
10ms  
SOT-89  
0.5  
0
3
2
TC =25°C  
-0.01  
2
3
5
7 -10  
2
3 5 7 -100  
-0.1  
2
3 5 7-1.0  
0
20  
40  
60  
80  
100  
120 140  
160  
Collector-to-Emitter Voltage,VCE-V  
Ambient Temperature, TA - C  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R208-018.C  
www.unisonic.com.tw  
2SA2016  
PNP PLANAR TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R208-018.C  
www.unisonic.com.tw  
2SA2016  
PNP PLANAR TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R208-018.C  
www.unisonic.com.tw  

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