2SA1797A [UTC]
Transistor;型号: | 2SA1797A |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总2页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UTC2SA1797
PNPEPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
*Low saturation voltage.
VCE (sat)=-0.35V(Max) at IC / IB=-1A / -50mA
*Excellent DC current gain characteristics
1
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
V
W
A
A
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
-50
-6
0.5
-2
-5
Collector Power Dissipation
Collector Current(DC)
Collector Current(PULSE) (note 1)
Junction Temperature
Ic
Ic
Tj
150
-55 ~ +150
Storage Temperature
TSTG
Note1: Single pulse, PW=10ms
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-50µA
MIN TYP MAX UNIT
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cutoff Current
-50
-50
-6
V
V
V
µA
µA
V
Ic=-1mA
IE=-50µA
VCB=-50V
VEB=-5V
-0.1
Emitter Cutoff Current
IEBO
-0.1
-0.15 -0.35
400
Collector-emitter Saturation Voltage
DC Current transfer ratio
Transition Frequency
VCE(sat)
hFE
fT
Cob
IC/IB=-1A/-50mA (note1)
VCE=-2V,Ic=-0.5A (note1)
VCE=-2V,IE=0.5A,f=100MHz
VCB=-10V,IE=0A,f=1MHz
120
200
36
MHz
pF
Output Capacitance
Note 1: Measured using pulse current.
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-029,A
UTC2SA1797
PNPEPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
A
B
RANGE
120-240
200-400
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-029,A
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