2SA1797G-X-AA3-R [UTC]
POWER TRANSISTOR; 功率晶体管
| 型号： | 2SA1797G-X-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | POWER TRANSISTOR |
| 文件： | 总4页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1797
PNP SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
* Low Saturation Voltage.
CE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA
V
* Excellent DC Current Gain Characteristics
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
E
E
B
B
2
C
C
C
C
C
C
3
E
E
B
B
E
E
2SA1797L-x-AA3-R
2SA1797L-x-AB3-R
2SA1797L-x-T9N-B
2SA1797L-x-T9N-K
2SA1797L-x-TN3-R
2SA1797L-x-TN3-T
2SA1797G-x-AA3-R
2SA1797G-x-AB3-R
2SA1797G-x-T9N-B
2SA1797G-x-T9N-K
2SA1797G-x-TN3-R
2SA1797G-x-TN3-T
SOT-223
SOT-89
TO-92NL
TO-92NL
TO-252
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
TO-252
www.unisonic.com.tw
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R208-029,F
2SA1797
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
VCEO
-50
V
VEBO
-6
V
DC
-2
A
Collector Current
IC
PULSE(Note 1)
TO-92NL
SOT-223
SOT-89
-5
A
1
0.8
W
W
W
W
°C
°C
Collector Power Dissipation
PC
0.5
TO-252
1.9
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note: 1. Single pulse, PW=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC = -50μA
IC = -1mA
IE = -50μA
VCB = -50V
VEB = -5V
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-50
-50
-6
V
V
V
-0.1
-0.1
μA
μA
V
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage
DC Current Gain
VCE(SAT) IC/IB = -1A/-50mA (Note)
-0.15 -0.35
400
hFE
fT
VCE = -2V, IC=-0.5A (Note)
VCE = -2V, IE=0.5A, f=100MHz
VCB = -10V, IE=0A, f=1MHz
120
Transition Frequency
200
MHz
pF
Output Capacitance
COB
36
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
A
B
RANGE
120-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R208-029,F
www.unisonic.com.tw
2SA1797
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output
Characteristics
2.0
1.8
-10
-5
-2
-1
TA=25°С
VCE=2V
IB=10mA
1.6
1.4
-0.5
1.2
1
-0.2
-0.1
-0.05
4mA
3mA
800m
-0.02
-0.01
-5m
600m
400m
2mA
1mA
200m
0
-2m
-1m
0 1
2
3
4
5
6
7
8
9 10
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R208-029,F
www.unisonic.com.tw
2SA1797
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R208-029,F
www.unisonic.com.tw
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UTC
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