2N7000L-T92-R [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | 2N7000L-T92-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N7000
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC 2N7000 has been designed to minimize on-state
1
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product is
particularly suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate drivers, and other
switching applications
TO-92
FEATURES
*High density cell design for low RDS(ON)
*Voltage controlled small signal switch
*Rugged and reliable
*High saturation current capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
2N7000G-T92-B
2N7000G-T92-K
2N7000G-T92-R
1
S
S
S
2
3
D
D
D
2N7000L-T92-B
2N7000L-T92-K
2N7000L-T92-R
TO-92
TO-92
TO-92
G
G
G
Tape Box
Bulk
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 5
Copyright © 2011 Unisonic Technologies Co., Ltd.
QW-R502-059.C
2N7000
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
SYMBOL
PARAMETER
RATINGS
60
UNIT
V
Drain-Source Voltage
VDSS
VDGR
Drain-Gate Voltage (RGS≤1MΩ)
60
V
Continuous
±20
±40
115
800
400
3.2
V
Gate -Source Voltage
VGS
ID
Non Repetitive (tp<50μs)
Continuous
V
mA
mA
mW
mW/°C
Maximum Drain Current
Pulsed
Maximum Power Dissipation
Derated above 25°C
PD
Operating and Storage Temperature
TJ,TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
312.5
UNIT
Junction to Ambient
θJA
°C/W
ELECTRICAL CHARACTERISTICS
(Ta =25°C, unless otherwise specified)
TEST CONDITIONS MIN
PARAMETER
SYMBOL
TYP MAX UNIT
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V,ID=10 μA
60
V
DS=60V, VGS =0V
1
μA
mA
nA
nA
Drain-Source Leakage Current
IDSS
TJ=125°C
0.5
Gate-Body leakage, Forward
Gate-Body leakage Reverse
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
IGSSF
IGSSR
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
100
-100
VGS(TH) VDS =VGS, ID=250μA
1
2.1
1.2
2.5
7.5
V
VGS =10V, ID=500mA
TJ=100°C
1.7
13.5
7.5
13.5
3.75
1.5
Static Drain-Source On-Resistance
Drain-Source On-Voltage
RDS(ON)
Ω
VGS =5.0V, ID=50mA
1.7
2.4
TJ=100°C
VGS = 10V, ID=500mA
0.6
V
VDS(ON)
ID(ON)
VGS = 5.0V, ID=50mA
0.09
2700
On-State Drain Current
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS=10V, VDS≧2VDS(ON)
500
mA
CISS
COSS
CRSS
20
11
4
50
25
5
pF
pF
pF
VDS=25V,VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
V
DD=30V, RL=150Ω,
Turn-On Time
Turn-Off Time
tON
20
20
ns
ns
ID=200mA, VGS=10V, RGEN=25Ω
V
V
DD=30V, RL=150Ω, ID=200mA,
GS=10V, RGEN=25Ω
tOFF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward
Voltage
VSD
Is
VGS=0V, Is=115mA(Note )
0.88
1.5
115
0.8
V
mA
A
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-059.C
www.unisonic.com.tw
2N7000
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-059.C
www.unisonic.com.tw
2N7000
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R502-059.C
www.unisonic.com.tw
2N7000
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R502-059.C
www.unisonic.com.tw
相关型号：
2N7000L18-1
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
2N7000L18-2
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
2N7000L34Z
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN
FAIRCHILD
2N7000LTR
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN
VISHAY
2N7000LTR1
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
2N7000NOPTION2
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
CALOGIC
2N7000P001
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
2N7000P002
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
2N7000P003-G
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-2
SUPERTEX
2N7000P006
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
©2020 ICPDF网 联系我们和版权申明