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2N7000L34Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN;
2N7000L34Z
型号： 2N7000L34Z
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN
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November 1995  
2N7000 / 2N7002 / NDS7002A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
High density cell design for low RDS(ON)  
.
These N-Channel enhancement mode field effect transistors  
are produced using Fairchild's proprietary, high cell density,  
DMOS technology. These products have been designed to  
minimize on-state resistance while provide rugged, reliable,  
and fast switching performance. They can be used in most  
applications requiring up to 400mA DC and can deliver  
pulsed currents up to 2A. These products are particularly  
suited for low voltage, low current applications such as small  
servo motor control, power MOSFET gate drivers, and other  
switching applications.  
Voltage controlled small signal switch.  
Rugged and reliable.  
High saturation current capability.  
___________________________________________________________________________________________  
D
G
D
G
S
TO-92  
2N7000  
S
(TO-236AB)  
2N7002/NDS7002A  
Absolute Maximum Ratings  
TA = 25°C unless otherwise noted  
2N7000  
2N7002  
60  
NDS7002A  
Symbol  
Parameter  
Units  
VDSS  
Drain-Source Voltage  
V
V
60  
VDGR  
VGSS  
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
V
±20  
- Non Repetitive (tp < 50µs)  
±40  
115  
800  
200  
1.6  
ID  
Maximum Drain Current - Continuous  
- Pulsed  
200  
500  
400  
3.2  
280  
1500  
mA  
PD  
Maximum Power Dissipation  
Derated above 25oC  
300  
mW  
mW/°C  
°C  
2.4  
TJ,TSTG  
TL  
Operating and Storage Temperature Range  
-55 to 150  
-65 to 150  
Maximum Lead Temperature for Soldering  
Purposes, 1/16" from Case for 10 Seconds  
300  
625  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient  
312.5  
417  
°C/W  
R
JA  
q
© 1997 Fairchild Semiconductor Corporation  
2N7000.SAM Rev. A1  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Conditions  
Type  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
All  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA  
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V  
60  
V
2N7000  
1
1
µA  
mA  
µA  
mA  
nA  
nA  
TJ=125°C  
TJ=125°C  
2N7002  
NDS7002A  
VDS = 60 V, VGS = 0 V  
1
0.5  
10  
100  
2N7000  
IGSSF  
Gate - Body Leakage, Forward  
Gate - Body Leakage, Reverse  
VGS = 15 V, VDS = 0 V  
VGS = 20 V, VDS = 0 V  
2N7002  
NDS7002A  
2N7000  
IGSSR  
VGS = -15 V, VDS = 0 V  
VGS = -20 V, VDS = 0 V  
-10  
nA  
nA  
2N7002  
NDS7002A  
-100  
ON CHARACTERISTICS (Note 1)  
2N7000  
VGS(th)  
Gate Threshold Voltage  
VDS = VGS, ID = 1 mA  
VDS = VGS, ID = 250 µA  
0.8  
1
2.1  
2.1  
3
V
2N7002  
NDS7002A  
2.5  
2N7000  
RDS(ON)  
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA  
1.2  
1.9  
1.8  
1.2  
1.7  
1.7  
2.4  
1.2  
2
5
9
W
TJ =125°C  
VGS = 4.5 V, ID = 75 mA  
VGS = 10 V, ID = 500 mA  
5.3  
7.5  
13.5  
7.5  
13.5  
2
2N7002  
TJ =100°C  
TJ =100C  
TJ =125°C  
TJ =125°C  
VGS = 5.0 V, ID = 50 mA  
VGS = 10 V, ID = 500 mA  
VGS = 5.0 V, ID = 50 mA  
NDS7002A  
3.5  
3
1.7  
2.8  
0.6  
0.14  
0.6  
0.09  
0.6  
0.09  
5
2N7000  
2N7002  
VDS(ON)  
Drain-Source On-Voltage  
VGS = 10 V, ID = 500 mA  
VGS = 4.5 V, ID = 75 mA  
VGS = 10 V, ID = 500mA  
VGS = 5.0 V, ID = 50 mA  
VGS = 10 V, ID = 500mA  
VGS = 5.0 V, ID = 50 mA  
2.5  
0.4  
3.75  
1.5  
1
V
NDS7002A  
0.15  
2N7000.SAM Rev. A1  
Electrical Characteristics TA = 25oC unless otherwise noted  
Symbol  
Parameter  
Conditions  
Type  
Min  
Typ  
Max  
Units  
ON CHARACTERISTICS Continued (Note 1)  
2N7000  
2N7002  
ID(ON)  
On-State Drain Current  
VGS = 4.5 V, VDS = 10 V  
VGS = 10 V, VDS > 2 VDS(on)  
VGS = 10 V, VDS > 2 VDS(on)  
VDS = 10 V, ID = 200 mA  
VDS > 2 VDS(on), ID = 200 mA  
VDS > 2 VDS(on), ID = 200 mA  
75  
500  
500  
100  
80  
600  
2700  
2700  
320  
mA  
NDS7002A  
2N7000  
gFS  
Forward Transconductance  
mS  
2N7002  
320  
NDS7002A  
80  
320  
DYNAMIC CHARACTERISTICS  
All  
All  
Ciss  
Coss  
Crss  
ton  
Input Capacitance  
VDS = 25 V, VGS = 0 V,  
f = 1.0 MHz  
20  
11  
4
50  
25  
5
pF  
pF  
pF  
ns  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Time  
All  
2N7000  
10  
VDD = 15 V, RL = 25 W,  
ID = 500 mA, VGS = 10 V,  
RGEN = 25  
2N700  
NDS7002A  
20  
VDD = 30 V, RL = 150 W,  
ID = 200 mA, VGS = 10 V,  
RGEN = 25 W  
2N7000  
toff  
Turn-Off Time  
10  
20  
ns  
VDD = 15 V, RL = 25 W,  
ID = 500 mA, VGS = 10 V,  
RGEN = 25  
2N700  
NDS7002A  
VDD = 30 V, RL = 150 W,  
ID = 200 mA, VGS = 10 V,  
RGEN = 25 W  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
2N7002  
NDS7002A  
2N7002  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
Maximum Pulsed Drain-Source Diode Forward Current  
115  
280  
0.8  
1.5  
1.5  
1.2  
mA  
A
ISM  
NDS7002A  
2N7002  
VSD  
Drain-Source Diode Forward  
Voltage  
VGS = 0 V, IS = 115 mA (Note 1)  
VGS = 0 V, IS = 400 mA (Note 1)  
0.88  
0.88  
V
NDS7002A  
Note:  
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.  
2N7000.SAM Rev. A1  
Typical Electrical Characteristics  
2N7000 / 2N7002 / NDS7002A  
2
1.5  
1
3
2.5  
2
VGS = 10V  
VGS =4.0V  
9.0  
8.0  
4.5  
5.0  
7.0  
6.0  
6.0  
7.0  
8.0  
5.0  
1.5  
1
9.0  
10  
0.5  
0
4.0  
3.0  
0.5  
0
1
2
3
4
5
0
0.4  
0.8  
1.2  
1.6  
2
V
, DRAIN-SOURCE VOLTAGE (V)  
I
, DRAIN CURRENT (A)  
DS  
D
Figure 1. On-Region Characteristics  
Figure 2. On-Resistance Variation with Gate  
Voltage and Drain Current  
2
3
VGS = 10V  
V GS = 10V  
1.75  
1.5  
2.5  
2
ID = 500mA  
T
= 125°C  
J
1.25  
1
1.5  
1
25°C  
-55°C  
0.75  
0.5  
0
0.5  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0
0.4  
0.8  
1.2  
1.6  
2
, JUNCTION TEMPERATURE (°C)  
J
I
D
, DRAIN CURRENT (A)  
Figure 3. On-Resistance Variation  
with Temperature  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature  
2
1.6  
1.2  
0.8  
0.4  
0
1.1  
T
= -55°C  
J
VDS = 10V  
25°C  
V DS = VGS  
I D = 1 mA  
125°C  
1.05  
1
0.95  
0.9  
0.85  
0.8  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
, JUNCTION TEM PERATURE (°C)  
V
, GATE TO SOURCE VOLTAGE (V)  
J
GS  
Figure 5. Transfer Characteristics  
Figure 6. Gate Threshold Variation with  
Temperature  
2N7000.SAM Rev. A1  
Typical Electrical Characteristics (continued)  
2N7000 / 2N7002 /NDS7002A  
1.1  
1.075  
1.05  
1.025  
1
2
1
ID = 250µA  
VGS = 0V  
0.5  
T
= 125°C  
J
0.1  
25°C  
0.05  
-55°C  
0.975  
0.95  
0.925  
0.01  
0.005  
0.001  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0.2  
0.4  
V
0.6  
0.8  
1
1.2  
1.4  
, JUNCTION TEMPERATURE (°C)  
J
, BODY DIODE FORWARD VOLTAGE (V)  
SD  
Figure 8. Body Diode Forward Voltage Variation with  
Figure 7. Breakdown Voltage Variation  
with Temperature  
60  
40  
10  
VDS = 25V  
C
iss  
8
20  
10  
5
C
oss  
6
ID =500m A  
4
C
rss  
f = 1 MHz  
VGS = 0V  
2
280m A  
2
1
115m A  
0
1
2
3
5
10  
20  
30  
50  
0
0.4  
0.8  
1.2  
1.6  
2
V
, DRAIN TO SOURCE VOLTAGE (V)  
Q
g
, GATE CHARGE (nC)  
DS  
Figure 9. Capacitance Characteristics  
Figure 10. Gate Charge Characteristics  
ton  
toff  
VDD  
td(off)  
r
t
tf  
td(on)  
90%  
90%  
RL  
VIN  
D
VOUT  
Output, V  
Input, V  
out  
10%  
90%  
10%  
VGS  
Inverted  
RGEN  
DUT  
G
50%  
in  
50%  
10%  
S
Pulse Width  
Figure 11.  
Figure 12. Switching Waveforms  
2N7000.SAM Rev. A1  
Typical Electrical Characteristics (continued)  
3
2
3
2
1
1
0.5  
0.5  
0.1  
0.1  
0.05  
0.05  
V GS = 10V  
VGS = 10V  
SINGLE PULSE  
TA = 25°C  
SINGLE PULSE  
TA = 25°C  
0.01  
0.01  
0.005  
0.005  
1
2
5
10  
20  
30  
60 80  
1
2
5
10  
20  
30  
60 80  
V
, DRAIN-SOURCE VOLTAGE (V)  
V
, DRAIN-SOURCE VOLTAGE (V)  
DS  
DS  
Figure 13. 2N7000 Maximum  
Safe Operating Area  
Figure 14. 2N7002 Maximum  
Safe Operating Area  
3
2
1
0.5  
0.1  
0.05  
V GS = 10V  
SINGLE PULSE  
TA = 25°C  
0.01  
0.005  
1
2
5
10  
20  
30  
60 80  
V
, DRAIN-SOURCE VOLTAGE (V)  
DS  
Figure 15. NDS7000A Maximum  
Safe Operating Area  
1
D = 0.5  
0.2  
0.5  
R
(t) = r(t)  
*
R
qJA  
qJA  
R
= (See Datasheet)  
0.2  
0.1  
qJA  
0.1  
P(pk)  
0.05  
t1  
0.05  
t2  
0.02  
T
- T = P * R  
(t)  
0.01  
J
A
qJA  
Single Pulse  
0.02  
0.01  
Duty Cycle, D = t1 /t2  
0.0001  
0.001  
0.01  
0.1  
t , TIME (sec)  
1
10  
100  
300  
1
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve  
1
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.5  
0.2  
0.1  
R
(t) = r(t) * R  
qJA  
qJA  
= (See Datasheet)  
R
qJA  
0.05  
P(pk)  
t1  
0.01  
t2  
Single Pulse  
T
- T = P * R  
(t)  
J
A
qJA  
Duty Cycle, D = t1 /t2  
0.002  
0.001  
0.0001  
0.001  
0.01  
0.1  
t , TIME (sec)  
1
10  
100  
300  
1
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve  
2N7000.SAM Rev. A1  
TO-92 Tape and Reel Data  
TO-92 Packaging  
Configuration: Figure 1.0  
TAPE and REEL OPTION  
See Fig 2.0 for various  
Reeling Styles  
FSCINT Label sample  
FAIRCHILD SEMICONDUCTOR CORPORATION  
HTB:B  
QTY:  
10000  
LOT:  
CBVK741B019  
NSID:  
D/C1:  
SPEC:  
PN2222N  
FSCINT  
Label  
SPEC REV:  
QA REV:  
D9842  
B2  
5 Reels per  
Intermediate Box  
(FSCINT)  
Customized  
Label  
F63TNR Label sample  
LOT: CBVK741B019  
F63TNR  
Label  
QTY: 2000  
SPEC:  
FSID: PN222N  
Customized  
Label  
D/C1: D9842  
D/C2:  
QTY1:  
QTY2:  
SPEC REV:  
CPN:  
N/F: F  
(F63TNR)3  
375mm x 267mm x 375mm  
Intermediate Box  
TO-92 TNR/AMMO PACKING INFROMATION  
AMMO PACK OPTION  
See Fig 3.0 for 2 Ammo  
Pack Options  
Packing  
Style  
A
Quantity  
2,000  
EOL code  
D26Z  
Reel  
E
2,000  
D27Z  
Ammo  
M
2,000  
D74Z  
P
2,000  
D75Z  
FSCINT  
Label  
Unit weight  
Reel weight with components  
Ammo weight with components = 1.02 kg  
= 0.22 gm  
= 1.04 kg  
Max quantity per intermediate box = 10,000 units  
5 Ammo boxes per  
Intermediate Box  
327mm x 158mm x 135mm  
Immediate Box  
Customized  
Label  
F63TNR  
Label  
Customized  
Label  
333mm x 231mm x 183mm  
Intermediate Box  
(TO-92) BULK PACKING INFORMATION  
BULK OPTION  
See Bulk Packing  
Information table  
EOL  
CODE  
LEADCLIP  
DESCRIPTION  
QUANTITY  
2.0 K / BOX  
DIMENSION  
J18Z  
TO-18 OPTION STD  
TO-5 OPTION STD  
NO LEAD CLIP  
Anti-static  
Bubble Sheets  
J05Z  
NO LEAD CLIP  
NO LEADCLIP  
1.5 K / BOX  
2.0 K / BOX  
FSCINT Label  
NO EOL  
CODE  
TO-92 STANDARD  
STRAIGHT FOR: PKG 92,  
94 (NON PROELECTRON  
SERIES), 96  
L34Z  
TO-92 STANDARD  
STRAIGHT FOR: PKG 94  
NO LEADCLIP  
2.0 K / BOX  
(PROELECTRON SERIES  
2000 units per  
EO70 box for  
std option  
114mm x 102mm x 51mm  
Immediate Box  
BCXXX, BFXXX, BSRXXX),  
97, 98  
5 EO70 boxes per  
intermediate Box  
530mm x 130mm x 83mm  
Intermediate box  
Customized  
Label  
FSCINT Label  
10,000 units maximum  
per intermediate box  
for std option  
March 2001, Rev. B1  
©2001 Fairchild Semiconductor Corporation  
TO-92 Tape and Reel Data, continued  
TO-92 Reeling Style  
Configuration: Figure 2.0  
Machine Option “A” (H)  
Machine Option “E” (J)  
Style “A”, D26Z, D70Z (s/h)  
Style “E”, D27Z, D71Z (s/h)  
TO-92 Radial Ammo Packaging  
Configuration: Figure 3.0  
FIRST WIRE OFF IS COLLECTOR  
ADHESIVE TAPE IS ON THE TOP SIDE  
FLAT OF TRANSISTOR IS ON TOP  
FIRST WIRE OFF IS EMITTER  
ADHESIVE TAPE IS ON THE TOP SIDE  
FLAT OF TRANSISTOR IS ON BOTTOM  
ORDER STYLE  
D74Z (M)  
ORDER STYLE  
D75Z (P)  
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)  
ADHESIVE TAPE IS ON BOTTOM SIDE  
FLAT OF TRANSISTOR IS ON TOP  
FIRST WIRE OFF IS EMITTER (ON PKG. 92)  
ADHESIVE TAPE IS ON BOTTOM SIDE  
FLAT OF TRANSISTOR IS ON BOTTOM  
September 1999, Rev. B  
TO-92 Tape and Reel Data, continued  
TO-92 Tape and Reel Taping  
Dimension Configuration: Figure 4.0  
Hd  
P
Pd  
b
Ha  
W1  
d
S
L
H1  
HO  
L1  
WO  
t
W2  
W
t1  
P1 F1  
P2  
DO  
ITEM DESCRIPTION  
SYMBOL  
DIMENSION  
PO  
b
0.098 (max)  
Base of Package to Lead Bend  
Component Height  
Ha  
HO  
H1  
Pd  
Hd  
P
0.928 (+/- 0.025)  
0.630 (+/- 0.020)  
0.748 (+/- 0.020)  
0.040 (max)  
User Direction of Feed  
Lead Clinch Height  
Component Base Height  
Component Alignment ( side/side )  
Component Alignment ( front/back )  
Component Pitch  
0.031 (max)  
0.500 (+/- 0.020)  
0.500 (+/- 0.008)  
0.150 (+0.009, -0.010)  
0.247 (+/- 0.007)  
0.104 (+/- 0 .010)  
0.018 (+0.002, -0.003)  
0.429 (max)  
PO  
P1  
P2  
F1/F2  
d
Feed Hole Pitch  
Hole Center to First Lead  
Hole Center to Component Center  
Lead Spread  
Lead Thickness  
L
Cut Lead Length  
L1  
t
0.209 (+0.051, -0.052)  
0.032 (+/- 0.006)  
0.021 (+/- 0.006)  
0.708 (+0.020, -0.019)  
0.236 (+/- 0.012)  
0.035 (max)  
Taped Lead Length  
Taped Lead Thickness  
Carrier Tape Thickness  
Carrier Tape Width  
t1  
W
TO-92 Reel  
Configuration: Figure 5.0  
Hold - down Tape Width  
Hold - down Tape position  
Feed Hole Position  
WO  
W1  
W2  
DO  
S
0.360 (+/- 0.025)  
0.157 (+0.008, -0.007)  
0.004 (max)  
Sprocket Hole Diameter  
Lead Spring Out  
Note : All dimensions are in inches.  
ELECTROSTATIC  
SENSITIVE DEVICES  
D4  
D1  
ITEM DESCRIPTION  
SYSMBOL MINIMUM  
MAXIMUM  
D2  
Reel Diameter  
D1  
D2  
D2  
D3  
D4  
W1  
W2  
W3  
13.975  
1.160  
0.650  
3.100  
2.700  
0.370  
1.630  
14.025  
1.200  
0.700  
3.300  
3.100  
0.570  
1.690  
2.090  
F63TNR Label  
Arbor Hole Diameter (Standard)  
(Small Hole)  
Customized Label  
Core Diameter  
Hub Recess Inner Diameter  
Hub Recess Depth  
Flange to Flange Inner Width  
Hub to Hub Center Width  
W1  
W3  
W2  
Note: All dimensions are inches  
D3  
July 1999, Rev. A  
TO-92 Package Dimensions  
TO-92 (FS PKG Code 92, 94, 96)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 0.1977  
January 2000, Rev. B  
©2000 Fairchild Semiconductor International  
SOT-23 Tape and Reel Data  
SOT-23 Packaging  
Configuration: Figure 1.0  
Packaging Description:  
Customized Label  
SOT-23 parts are shipped in tape. The carrier tape is  
made from  
a dissipative (carbon filled) polycarbonate  
resin. The cover tape is a multilayer film (Heat Activated  
Adhesive in nature) primarily composed of polyester film,  
adhesive layer, sealant, and anti-static sprayed agent.  
These reeled parts in standard option are shipped with  
3,000 units per 7" or 177cm diameter reel. The reels are  
dark bluein color and is madeof polystyrene plastic (anti-  
static coated). Other option comes in 10,000 units per 13"  
or 330cm diameter reel. This and some other options are  
described in the Packaging Information table.  
Antistatic Cover Tape  
These full reels areindividually labeled and placed inside  
a
standard intermediate made of recyclable corrugated  
brown paper with aFairchild logo printing. One pizza box  
contains eight reels maximum. And these intermediate  
boxes are placed inside a labeled shipping box which  
comesin different sizes depending on the number of parts  
shipped.  
Human Readable  
Label  
Embossed  
CarrierTape  
3P  
3P  
3P  
3P  
SOT-23 PackagingInformation  
Standard  
(no flow code)  
PackagingOption  
D87Z  
Packagingtype  
TNR  
TNR  
10,000  
13"  
SOT-23 Unit Orientation  
Qty per Reel/Tube/Bag  
Reel Size  
3,000  
7" Dia  
Box Dimension (mm)  
Max qty per Box  
187x107x183 343x343x64  
343mmx 342mmx 64mm  
Intermediate box for L87Z Option  
Human Readable Label  
24,000  
0.0082  
0.1175  
30,000  
0.0082  
0.4006  
Weight per unit (gm)  
Weight per Reel (kg)  
Note/Comments  
Human Readable Label sample  
Human readable  
Label  
187mmx 107mmx 183mm  
SOT-23 Tape Leader and Trailer  
IntermediateBox forStandard Option  
Configuration: Figure 2.0  
Carrier Tape  
Cover Tape  
Components  
Trailer Tape  
Leader Tape  
300mm minimumor  
75 empty pockets  
500mm minimumor  
125 empty pockets  
September 1999, Rev. C  
©2000 Fairchild Semiconductor International  
SOT-23 Tape and Reel Data, continued  
SOT-23 Embossed Carrier Tape  
Configuration: Figure 3.0  
P0  
P2  
D0  
D1  
T
E1  
E2  
W
F
Wc  
B0  
Tc  
K0  
A0  
P1  
User Direction of Feed  
Dimensions are in millimeter  
E1 E2  
A0  
B0  
W
D0  
D1  
F
P1  
P0  
K0  
T
Wc  
5.2  
Tc  
Pkg type  
SOT-23  
(8mm)  
3.15  
+/-0.10  
2.77  
+/-0.10  
8.0  
+/-0.3  
1.55  
+/-0.05  
1.125  
1.75  
+/-0.10  
6.25  
min  
3.50  
+/-0.05  
4.0  
+/-0.1  
4.0  
+/-0.1  
1.30  
+/-0.10  
0.228  
+/-0.013  
0.06  
+/-0.02  
+/-0.125  
+/-0.3  
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481  
rotational and lateral movement requirements (see sketches A, B, and C).  
0.5mm  
maximum  
20 deg maximum  
Typical  
component  
cavity  
center line  
0.5mm  
maximum  
B0  
20 deg maximum component rotation  
Typical  
component  
center line  
Sketch A (Side or Front Sectional View)  
Component Rotation  
Sketch C (Top View)  
Component lateral movement  
A0  
Sketch B (Top View)  
Component Rotation  
SOT-23 Reel Configuration: Figure 4.0  
W1 Measured at Hub  
Dim A  
Max  
Dim A  
max  
See detail AA  
Dim N  
7"Diameter Option  
B Min  
Dim C  
See detail AA  
Dim D  
min  
W3  
13" Diameter Option  
W2 max Measured at Hub  
DETAIL AA  
Dim W2  
Dimensions are in inches and millimeters  
Reel  
Option  
Tape Size  
8mm  
Dim A  
Dim B  
Dim C  
Dim D  
Dim N  
Dim W1  
Dim W3 (LSL-USL)  
7.00  
177.8  
0.059  
1.5  
512 +0.020/-0.008  
13 +0.5/-0.2  
0.795  
20.2  
2.165  
55  
0.331 +0.059/-0.000  
8.4 +1.5/0  
0.567  
14.4  
0.311 – 0.429  
7.9 – 10.9  
7" Dia  
13.00  
330  
0.059  
1.5  
512 +0.020/-0.008  
13 +0.5/-0.2  
0.795  
20.2  
4.00  
100  
0.331 +0.059/-0.000  
8.4 +1.5/0  
0.567  
14.4  
0.311 – 0.429  
7.9 – 10.9  
8mm  
13" Dia  
September 1999, Rev. C  
SOT-23 Package Dimensions  
SOT-23 (FS PKG Code 49)  
1:1  
Scale 1:1 on letter size paper  
Dimensions shown below are in:  
inches [millimeters]  
Part Weight per unit (gram): 0.0082  
September 1998, Rev. A1  
©2000 Fairchild Semiconductor International  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
PowerTrench  
QFET™  
QS™  
SyncFET™  
TinyLogic™  
UHC™  
ACEx™  
FASTr™  
GlobalOptoisolator™  
GTO™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
QT Optoelectronics™  
VCX™  
HiSeC™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
POP™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
FAST  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. G  

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