2N2955 [UTC]

SILICON PNP TRANSISTOR; 硅PNP晶体管
2N2955
型号: 2N2955
厂家: Unisonic Technologies    Unisonic Technologies
描述:

SILICON PNP TRANSISTOR
硅PNP晶体管

晶体 晶体管
文件: 总2页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC2N2955  
SILICON PNP TRANSISTOR  
SILICON PNP TRANSISTORS  
The UTC 2N2955 is a silicon PNP transistor in TO-3  
metal case. It is intended for power switching circuits,  
series and shunt regulators, output stages and high fidelity  
amplifiers.  
TO-3  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETERS  
SYMBOL  
VCBO  
VCEO  
VEBO  
VCEV  
Ic  
VALUE  
UNITS  
V
V
V
V
A
A
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
100  
60  
7
Collector-Emitter Voltage  
Collector Current  
Collector Peak Current(1)  
Base Current  
70  
15  
15  
ICM  
IB  
7
Base Peak Current(1)  
Total Dissipation at Ta=25°C  
Storage Temperature  
IBM  
Ptot  
TSTG  
Tj  
15  
115  
-65 to 200  
200  
A
W
°C  
°C  
Max. Operating Junction Temperature  
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)  
PARAMETER  
OFF CHARACTERISTICS  
Collector-Emitter Sustaining  
Voltage  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
VCEO(sus)  
Ic=200mA, IB=0V  
60  
70  
V
Collector-Emitter Sustaining Voltage VCER(sus)  
Ic=0.2 A, RBE=100 Ohms  
VCE=30V,IB=0  
VCE=100V,VBE(off)=1.5V.  
VCE=100V,VBE(off)=1.5V,  
Ta=150°C  
V
mA  
mA  
Collector Cut-off Current  
Collector Cut-off Current  
ICEO  
ICEX  
0.7  
1.0  
5.0  
Emitter Cut-off Current  
ON CHARACTERISTICS  
DC Current Gain(note)  
IEBO  
hFE  
VBE=7V,IC=0  
5.0  
70  
mA  
V
Ic=4A,VCE=4V,  
Ic=10A,VCE=4V  
Ic=4A,IB=400mA  
Ic=10A,IB=3.3A  
20  
5
Collector-Emitter Saturation Voltage  
VCE(sat)  
1.1  
3.0  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-004,A  
UTC2N2955  
SILICON PNP TRANSISTOR  
PARAMETER  
SYMBOL  
VBE(on)  
TEST CONDITIONS  
Ic=4A,VCE=4V  
MIN TYP MAX UNIT  
Base-Emitter On Voltage  
SECOND BREAKDOWN  
Second Breakdown Collector with  
Base Forward Biased  
1.5  
V
Is/b  
VCE=60V,T=1.0s, Non-repetitive 2.87  
A
DYNAMIC CHARACTERISTICS  
Current Gain-Bandwidth Product  
Small-Signal Current Gain  
Small-Signal Current Gain  
Cut-off Frequency  
fT  
hFE  
fHFE  
Ic=0.5A,VCE=10V,f=1MHz  
Ic=1A,VCE=4V,f=1kHz  
Ic=1A,VCE=4V  
2.5  
15  
10  
MHz  
kHz  
120  
F=1.0kHz  
Note(1):Pulse Test: Puls Width<=300µs, Duty Cycle<=2%  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R205-004,A  

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