2N2955_15 [UTC]
SILICON PNP TRANSISTORS;
| 型号： | 2N2955_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | SILICON PNP TRANSISTORS |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N2955
PNP SILICON TRANSISTOR
SILICON PNP TRANSISTORS
DESCRIPTION
The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case.
It is intended for power switching circuits, series and shunt
regulators, output stages and high fidelity amplifiers.
ORDERING INFORMATION
Pin Assignment
Packing
Ordering Number
2N2955L-T30-Y
Package
TO-3
1
2
3
E
B
C
Tray
Note: 3: Case
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R205-004,Ca
2N2955
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
SYMBOL
VCBO
VCEO
VEBO
VCEV
IC
RATINGS
UNITS
Collector-Base Voltage
100
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
60
7
70
V
Collector-Emitter Voltage
Collector Current
V
15
A
Collector Peak Current(1)
Base Current
ICM
15
A
IB
7
A
Base Peak Current(1)
Total Dissipation at Ta=25°C
Max. Operating Junction Temperature
Storage Temperature
IBM
15
A
PD
115
+200
-65 ~ 200
W
°C
°C
TJ
TSTG
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
VCEO(SUS) IC=200mA, IB=0V
60
70
Collector-Emitter Sustaining
Voltage
VCER(SUS) IC=0.2 A, RBE=100Ω
V
Collector Cut-off Current
ICEO
ICEX
IEBO
VCE=30V,IB=0
0.7
1.0
5.0
mA
VCE=100V, VBE(OFF)=1.5V
Collector Cut-off Current
VCE=100V, VBE(OFF)=1.5V,
mA
mA
Ta=150°C
VBE=7V, IC=0
Emitter Cut-off Current
5.0
70
ON CHARACTERISTICS
IC=4A,VCE=4V,
IC=10A,VCE=4V
IC=4A, IB=400mA
IC=10A, IB=3.3A
20
5
DC Current Gain(Note 2)
hFE
Collector-Emitter Saturation
Voltage
1.1
3.0
1.5
VCE(SAT)
V
V
Base-Emitter On Voltage
SECOND BREAKDOWN
Second Breakdown Collector with
Base Forward Biased
VBE(ON) IC=4A, VCE=4V
Is/b
VCE=60V, T=1.0s, Non-repetitive
2.87
A
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
Small-Signal Current Gain
Small-Signal Current Gain
Cut-off Frequency
fT
IC=0.5A, VCE=10V, f=1MHz
IC=1A, VCE=4V, f=1kHz
2.5
15
MHz
kHz
hFE
120
fhFE
IC=1A, VCE=4V, f=1kHz
10
Note 2. Pulse Test: PW≦300μs, Duty Cycle≦2%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R205-004,Ca
www.unisonic.com.tw
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