20N15G-TN3-R [UTC]
20A, 150V N-CHANNEL POWER MOSFET;型号: | 20N15G-TN3-R |
厂家: | Unisonic Technologies |
描述: | 20A, 150V N-CHANNEL POWER MOSFET |
文件: | 总4页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
20N15
Power MOSFET
20A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 20N15 is an N-Channel POWER MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low gate charge.
The UTC 20N15 is suitable for bridge circuits, power
converters and PWM motor controls.
FEATURES
* RDS(on)<0.13Ω @VGS=10V, ID=10A
* High switching speed
* Low gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
20N15L-TF1-T
Halogen Free
1
2
3
S
S
S
S
G
G
G
G
D
D
D
D
20N15G-TF1-T
20N15G-TF2-T
20N15G-TN3-T
20N15G-TN3-R
TO-220F1
TO-220F2
TO-252
Tube
Tube
20N15L-TF2-T
20N15L-TN3-T
Tube
20N15L-TN3-R
TO-252
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R502-904.C
20N15
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
150
±20
20
V
V
A
A
Continuous
Continuous
Drain Current
Single Pulsed (tp≤10µs)
Starting TJ=25°C
(VDD=120V, VGS=10V,
IL=20A, L=0.3mH)
TO-220F1
IDM
60
Single Drain–to–Source
Avalanche Energy
60
mJ
EAS
36
38
W
W
W
°C
°C
Power Dissipation
TO-220F2
PD
TO-252
50
Operating Temperature
TJ
+150
-55~+150
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
TO-220F1/TO-220F2
Junction to Ambient
Junction to Case
θJA
TO-252
110
TO-220F1
TO-220F2
TO-252
3.47
θJC
3.28
2.5
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QW-R502-904.C
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20N15
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
ID=0.25mA, VGS=0V
150
V
VDS=150V, VGS=0V
10
µA
Drain-Source Leakage Current
VDS=150V, VGS=0V, TJ=125°C
100
µA
Forward
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
100
nA
nA
Gate-Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=0.25mA
VGS=10V, ID=10A
2.0
4.0
V
Static Drain-Source On-State Resistance
Drain–Source On–Voltage
0.12 0.13
Ω
VDS(ON)
VGS=10V, ID=20A
2.8
V
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1133 1627 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
332 474
105 174
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
QG
QGS
QGD
tD(ON)
tR
39.1 55.9 nC
Gate Charge
VGS=10V, VDS=75V, ID=20A
7.5
22
11
nC
nC
ns
ns
ns
ns
Turn-ON Delay Time
Rise Time
25
77 153
VDD=75V, VGS=10V, ID=20A,
RG=9.1Ω
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
33
49
67
97
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 1)
VSD
IS=20A, VGS=0V
1.5
V
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
ISM
tRR
20
60
Pulsed Drain-Source Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A
160
1.1
ns
µC
IS=20A, VGS=0V, dIS/dt=100A/µs
QRR
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-904.C
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20N15
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
40
80
120
160
200
0
0.3
Gate Threshold Voltage, VTH (V)
0.6 0.9
1.2
1.5 1.8
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-904.C
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