20N15L-TN3-R [UTC]

20A, 150V N-CHANNEL POWER MOSFET;
20N15L-TN3-R
型号: 20N15L-TN3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

20A, 150V N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD  
20N15  
Power MOSFET  
20A, 150V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 20N15 is an N-Channel POWER MOSFET, it uses  
UTC’s advanced technology to provide customers with high  
switching speed and low gate charge.  
The UTC 20N15 is suitable for bridge circuits, power  
converters and PWM motor controls.  
„
FEATURES  
* RDS(on)<0.13@VGS=10V, ID=10A  
* High switching speed  
* Low gate charge  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
20N15L-TF1-T  
Halogen Free  
1
2
3
S
S
S
S
G
G
G
G
D
D
D
D
20N15G-TF1-T  
20N15G-TF2-T  
20N15G-TN3-T  
20N15G-TN3-R  
TO-220F1  
TO-220F2  
TO-252  
Tube  
Tube  
20N15L-TF2-T  
20N15L-TN3-T  
Tube  
20N15L-TN3-R  
TO-252  
Tape Reel  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
www.unisonic.com.tw  
1 of 4  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R502-904.C  
20N15  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
150  
±20  
20  
V
V
A
A
Continuous  
Continuous  
Drain Current  
Single Pulsed (tp10µs)  
Starting TJ=25°C  
(VDD=120V, VGS=10V,  
IL=20A, L=0.3mH)  
TO-220F1  
IDM  
60  
Single Drain–to–Source  
Avalanche Energy  
60  
mJ  
EAS  
36  
38  
W
W
W
°C  
°C  
Power Dissipation  
TO-220F2  
PD  
TO-252  
50  
Operating Temperature  
TJ  
+150  
-55~+150  
Storage Temperature Range  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220F1/TO-220F2  
Junction to Ambient  
Junction to Case  
θJA  
TO-252  
110  
TO-220F1  
TO-220F2  
TO-252  
3.47  
θJC  
3.28  
2.5  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R502-904.C  
www.unisonic.com.tw  
20N15  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
BVDSS  
IDSS  
ID=0.25mA, VGS=0V  
150  
V
VDS=150V, VGS=0V  
10  
µA  
Drain-Source Leakage Current  
VDS=150V, VGS=0V, TJ=125°C  
100  
µA  
Forward  
VGS=+20V, VDS=0V  
VGS=-20V, VDS=0V  
100  
100  
nA  
nA  
Gate-Source Leakage Current  
IGSS  
Reverse  
ON CHARACTERISTICS (Note 1)  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=0.25mA  
VGS=10V, ID=10A  
2.0  
4.0  
V
Static Drain-Source On-State Resistance  
Drain–Source On–Voltage  
0.12 0.13  
VDS(ON)  
VGS=10V, ID=20A  
2.8  
V
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
1133 1627 pF  
Output Capacitance  
VGS=0V, VDS=25V, f=1.0MHz  
332 474  
105 174  
pF  
pF  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS (Note 2)  
QG  
QGS  
QGD  
tD(ON)  
tR  
39.1 55.9 nC  
Gate Charge  
VGS=10V, VDS=75V, ID=20A  
7.5  
22  
11  
nC  
nC  
ns  
ns  
ns  
ns  
Turn-ON Delay Time  
Rise Time  
25  
77 153  
VDD=75V, VGS=10V, ID=20A,  
RG=9.1Ω  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
33  
49  
67  
97  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
(Note 1)  
VSD  
IS=20A, VGS=0V  
1.5  
V
A
Maximum Continuous Drain-Source Diode  
Forward Current  
IS  
ISM  
tRR  
20  
60  
Pulsed Drain-Source Current  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
A
160  
1.1  
ns  
µC  
IS=20A, VGS=0V, dIS/dt=100A/µs  
QRR  
Notes: 1. Pulse Test: Pulse Width300µs, Duty Cycle2%.  
2. Switching characteristics are independent of operating junction temperature.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R502-904.C  
www.unisonic.com.tw  
20N15  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Drain Current vs. Drain-Source  
Breakdown Voltage  
Drain Current vs. Gate Threshold Voltage  
300  
300  
250  
200  
150  
100  
250  
200  
150  
100  
50  
50  
0
0
0
40  
80  
120  
160  
200  
0
0.3  
Gate Threshold Voltage, VTH (V)  
0.6 0.9  
1.2  
1.5 1.8  
Drain-Source Breakdown Voltage, BVDSS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R502-904.C  
www.unisonic.com.tw  

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