16N50 [UTC]
16 Amps, 500 Volts N-CHANNEL POWER MOSFET; 16安培， 500伏特N沟道功率MOSFET
| 型号： | 16N50 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 16 Amps, 500 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
16N50
Preliminary
Power MOSFET
16 Amps, 500 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 16N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 16N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
TO-220F
FEATURES
* 16A, 500V, RDS(ON)=0.38Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220F
Packing
Tube
Lead Free
Halogen Free
16N50G-TF3-T
1
2
3
16N50L-TF3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-532.a
16N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
500
±30
V
Continuous (TC=25°C)
Pulsed (Note 3)
16 (Note 2)
64 (Note 2)
16
A
Drain Current
IDM
A
Avalanche Current (Note 3)
Single Pulsed (Note 4)
Repetitive (Note 5)
IAR
A
EAS
780
mJ
mJ
V/ns
W
Avalanche Energy
EAR
20
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
TC=25°C
52
Power Dissipation
PD
Derate above 25°C
0.41
W/°C
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55~+150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.4
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16N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
2.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.31 0.38
ꢀ
CISS
COSS
CRSS
1495 1945 pF
235 310 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
20
30
pF
QG
QGS
QGD
tD(ON)
tR
32
8.5
14
40
45
nC
nC
nC
ns
VGS=10V, VDS=400V, ID=16A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 6, 7)
90
VDD=250V, ID=16A, RG=25ꢀ
(Note 6, 7)
150 310 ns
65 140 ns
80 170 ns
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
9.2
37
A
A
ISM
VSD
tRR
IS=16A, VGS=0V
1.4
V
IS=16A, VGS=0V, dIF/dt=100A/µs
(Note 6)
490
5.0
ns
µC
QRR
Notes: 6. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
7. Essentially independent of operating temperature
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16N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kꢀ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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16N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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16N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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